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LF3304QC18
LOGIC Devices Inc
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Check for Price | No | Obsolete | 49.152 kbit | 12 | 4KX12 | 3.3 V | MEMORY CIRCUIT | 2 | 4000 | 4.096 k | SYNCHRONOUS | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 3 | 70 °C | 225 | 100 | PLASTIC/EPOXY | QFP | RECTANGULAR | FLATPACK | YES | GULL WING | 650 µm | QUAD | 3.1496 mm | 20 mm | 14 mm | LOGIC DEVICES INC | QFP | QFP, | 100 | unknown | EAR99 | 8542.32.00.71 | ||||||||||||||
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LF3304QC25
LOGIC Devices Inc
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Check for Price | No | Obsolete | 49.152 kbit | 12 | 4KX12 | 3.3 V | MEMORY CIRCUIT | 2 | 4000 | 4.096 k | SYNCHRONOUS | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 3 | 70 °C | 225 | 100 | PLASTIC/EPOXY | QFP | RECTANGULAR | FLATPACK | YES | GULL WING | 650 µm | QUAD | 3.1496 mm | 20 mm | 14 mm | LOGIC DEVICES INC | QFP | QFP, | 100 | unknown | EAR99 | 8542.32.00.71 | ||||||||||||||
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S75NS128NDEZFWNK2
Spansion
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Check for Price | Yes | Obsolete | 134.2177 Mbit | 16 | 8MX16 | 1.8 V | MEMORY CIRCUIT | 1 | 8000000 | 8.3886 M | ASYNCHRONOUS | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B133 | Not Qualified | e1 | 85 °C | -25 °C | 260 | 40 | 133 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 500 µm | BOTTOM | 1.3 mm | 11 mm | 10 mm | SPANSION INC | BGA | LFBGA, | 133 | compliant | EAR99 | 8542.32.00.71 | |||||||||
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M36W0T7040T0ZAQE
STMicroelectronics
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Check for Price | Yes | Transferred | 134.2177 Mbit | 16 | 8MX16 | 70 ns | MEMORY CIRCUIT | PSRAM IS ORGANIZED AS 1M X 16 | FLASH+PSRAM | 1 | 8000000 | 8.3886 M | ASYNCHRONOUS | 2 V | 1.7 V | CMOS | OTHER | R-PBGA-B88 | Not Qualified | e1 | 85 °C | -30 °C | 88 | PLASTIC/EPOXY | TFBGA | BGA88,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 10 mm | 8 mm | STMICROELECTRONICS | BGA | 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 | 88 | unknown | EAR99 | 8542.32.00.71 | ||||||||
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MT28C128564W18DBW-F706P85TBWT
Micron Technology Inc
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Check for Price | Obsolete | 67.1089 Mbit | 16 | 4MX16 | MEMORY CIRCUIT | CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B77 | Not Qualified | e1 | 85 °C | -25 °C | 77 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 10 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | LFBGA, | 77 | unknown | EAR99 | 8542.32.00.71 | ||||||||||||
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SST34HF1622S-70-4C-L1PE
Silicon Storage Technology
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Check for Price | Yes | Transferred | 16.7772 Mbit | 16 | 1MX16 | 3 V | MEMORY CIRCUIT | SRAM IS ORGANIZED AS 128K X 16 / 256K X 8; FLASH CAN ALSO BE ORGANIZED AS 2M X 8 | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3.3 V | 2.7 V | CMOS | COMMERCIAL | R-PBGA-B56 | Not Qualified | e1 | 70 °C | 260 | 40 | 56 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.4 mm | 10 mm | 8 mm | SILICON STORAGE TECHNOLOGY INC | BGA | LFBGA, | 56 | unknown | EAR99 | 8542.32.00.71 | |||||||||
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WSE128K16-42G2TC
White Electronic Designs Corp
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Check for Price | No | Transferred | 2.0972 Mbit | 16 | 128KX16 | 5 V | 120 ns | MEMORY CIRCUIT | ALSO CONTAINS 128K X 16 BIT SRAM | FLASH+SRAM | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 31.2 mA | 360 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-CQMA-G68 | Not Qualified | e4 | 70 °C | 68 | CERAMIC, METAL-SEALED COFIRED | QFP | QFP68,.99SQ,50 | SQUARE | MICROELECTRONIC ASSEMBLY | YES | GOLD | GULL WING | 1.27 mm | QUAD | WHITE ELECTRONIC DESIGNS CORP | CERAMIC, QFP-68 | unknown | EAR99 | 8542.32.00.71 | |||||||||||
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TH50VSF4683AASB
Toshiba America Electronic Components
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Check for Price | Transferred | 67.1089 Mbit | 16 | 4MX16 | 3 V | 80 ns | MEMORY CIRCUIT | USER CONFIGURABLE AS 8M X 8 FLASH AND CO... more | FLASH+SRAM | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 50 µA | 3.1 V | 2.7 V | CMOS | OTHER | R-PBGA-B69 | Not Qualified | e0 | 85 °C | -30 °C | 69 | PLASTIC/EPOXY | LFBGA | BGA69,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 10 mm | TOSHIBA CORP | BGA | LFBGA, BGA69,10X12,32 | 69 | unknown | EAR99 | 8542.32.00.71 | |||||||
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AM49LV6408MT10IT
Spansion
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Check for Price | No | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 3 V | MEMORY CIRCUIT | PSRAM IS ORGANISED AS 512K X 16, TOP BOOT BLOCK | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B69 | Not Qualified | e0 | 85 °C | -40 °C | 69 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.2 mm | 10 mm | 8 mm | SPANSION INC | BGA | TFBGA, | 69 | compliant | EAR99 | 8542.32.00.71 | ||||||||||
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MT28C128532W18DFW-F705P85KBBWT
Micron Technology Inc
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Check for Price | Obsolete | 67.1089 Mbit | 16 | 4MX16 | MEMORY CIRCUIT | CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B77 | Not Qualified | e1 | 85 °C | -25 °C | 77 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 10 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | LFBGA, | 77 | unknown | EAR99 | 8542.32.00.71 |