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11 - 20 of 39,010 results
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82S181A/BKA
YAGEO Corporation
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Check for Price | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | OTP ROM | 1 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 5.5 V | 4.5 V | BIPOLAR | MILITARY | R-CDFP-F24 | Not Qualified | 125 °C | -55 °C | 24 | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | FLATPACK | YES | FLAT | DUAL | PHILIPS COMPONENTS | , | unknown | EAR99 | 8542.32.00.71 | ||||||||||||||||||||||
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AT27C256R-15TC
Atmel Corporation
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 150 ns | OTP ROM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 13 V | 100 µA | 20 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G28 | Not Qualified | e0 | 3 | 70 °C | 240 | 28 | PLASTIC/EPOXY | TSOP1 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 550 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | ATMEL CORP | PLASTIC, TSOP-28 | unknown | EAR99 | 8542.32.00.71 | TSOP | 28 | |||||
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5962-8670302EA
Lansdale Semiconductor Inc
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Check for Price | No | Active | 256 bit | 8 | 32X8 | 5 V | 35 ns | OTP ROM | 1 | 32 | 32 words | ASYNCHRONOUS | PARALLEL | 115 µA | 5.5 V | 4.5 V | BIPOLAR | MILITARY | R-GDIP-T16 | Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 | 16 | CERAMIC, GLASS-SEALED | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | LANSDALE SEMICONDUCTOR INC | DIP, DIP16,.3 | compliant | EAR99 | 8542.32.00.71 | DIP | 16 | |||||||||||||
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5352-1J883B
Monolithic Memories (RETIRED)
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 70 ns | OTP ROM | 1 | 32000 | 1.024 k | ASYNCHRONOUS | PARALLEL | 175 µA | 5.5 V | 4.5 V | TTL | MILITARY | R-XDIP-T18 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 18 | CERAMIC | DIP | DIP18,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | MONOLITHIC MEMORIES | unknown | EAR99 | 8542.32.00.71 | ||||||||||||||||
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53LS241JB
Monolithic Memories (RETIRED)
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Check for Price | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 3.3 V | 55 ns | OTP ROM | 1 | 8000 | 512 words | ASYNCHRONOUS | PARALLEL | 3.6 V | 3 V | TTL | MILITARY | R-XDIP-T16 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B (Modified) | 16 | CERAMIC | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | MONOLITHIC MEMORIES | DIP, DIP16,.3 | unknown | EAR99 | 8542.32.00.71 | ||||||||||||||||
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6336-2JSHRP
Monolithic Memories (RETIRED)
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Check for Price | No | Obsolete | 1.0486 Mbit | 16 | 64KX16 | 5 V | 120 ns | OTP ROM | 1 | 64000 | 256 words | ASYNCHRONOUS | PARALLEL | 50 µA | TTL | COMMERCIAL | R-XDIP-T24 | e0 | 70 °C | 24 | CERAMIC | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | MONOLITHIC MEMORIES | DIP, DIP24,.6 | unknown | EAR99 | 8542.32.00.71 | ||||||||||||||||||||
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5962H9689106VXA
Cobham Semiconductor Solutions
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Check for Price | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 90 ns | OTP ROM | 1 | 1000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 50 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-XDFP-F28 | Not Qualified | e0 | 125 °C | -55 °C | 1M Rad(Si) V | 28 | UNSPECIFIED | DFP | RECTANGULAR | FLATPACK | YES | TIN LEAD | FLAT | 1.27 mm | DUAL | 2.921 mm | 12.446 mm | AEROFLEX COLORADO SPRINGS | DFP, | unknown | 3A001.A.1.A | 8542.32.00.71 | DFP | 28 | |||||||||||||
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M27W512-200K4TR
STMicroelectronics
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Check for Price | Yes | Obsolete | 524.288 kbit | 8 | 64KX8 | 200 ns | OTP ROM | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 2.7 V | CMOS | COMMERCIAL | R-PQCC-J32 | Not Qualified | e3 | 70 °C | -20 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) | J BEND | 1.27 mm | QUAD | 3.56 mm | 13.995 mm | 11.455 mm | STMICROELECTRONICS | PLASTIC, LCC-32 | compliant | EAR99 | 8542.32.00.71 | QFJ | 32 | ||||||||||||||
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MB7112HZ
FUJITSU Semiconductor Limited
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 170 ns | OTP ROM | 1 | 32000 | 32 words | ASYNCHRONOUS | PARALLEL | 35 µA | TTL | COMMERCIAL | R-XDIP-T16 | Not Qualified | e0 | 70 °C | 16 | CERAMIC | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | FUJITSU LTD | DIP, DIP16,.3 | unknown | EAR99 | 8542.32.00.71 | |||||||||||||||||||
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R29683LM/883B
e2v technologies
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Check for Price | No | Active | 8.192 kbit | 4 | 2KX4 | 5 V | 70 ns | OTP ROM | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 170 µA | BIPOLAR | MILITARY | S-XQCC-N28 | Not Qualified | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC | QCCN | LCC28,.45SQ | SQUARE | CHIP CARRIER | YES | NO LEAD | 1.27 mm | QUAD | TELEDYNE E2V (UK) LTD | QCCN, LCC28,.45SQ | compliant | EAR99 | 8542.32.00.71 |