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SN74ACT2229DW
Texas Instruments
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$13.6114 | Yes | Yes | Active | 256 bit | 1 | 256X1 | 5 V | 9 ns | 60 MHz | 16.67 ns | OTHER FIFO | 1 | 256 | 256 words | SYNCHRONOUS | 3-STATE | YES | SERIAL | 400 µA | 400 nA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-G28 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 28 | PLASTIC/EPOXY | SOP | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 2.65 mm | 17.9 mm | 7.5 mm | TEXAS INSTRUMENTS INC | SOIC | ROHS COMPLIANT, PLASTIC, SOIC-28 | 28 | compliant | EAR99 | 8542.39.00.01 | ||||||||
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72V02L15JG
Renesas Electronics Corporation
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$14.8910 | Yes | Yes | Active | 9.216 kbit | 9 | 1KX9 | 3.3 V | 15 ns | 25 ns | OTHER FIFO | 1 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 5 mA | 60 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PQCC-N32 | e3 | 1 | 70 °C | 260 | 30 | 32 | PLASTIC/EPOXY | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 2.79 mm | 13.97 mm | 11.43 mm | RENESAS ELECTRONICS CORP | PLCC | 32 | compliant | NLR | 8542320071 | PLG32 | Renesas Electronics | ||||||||||
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72241L10JG
Integrated Device Technology Inc
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$17.0601 | Yes | Yes | Transferred | 36.864 kbit | 9 | 4KX9 | 5 V | 6.5 ns | 10 ns | OTHER FIFO | 1 | 4000 | 4.096 k | SYNCHRONOUS | 3-STATE | YES | PARALLEL | 5 mA | 35 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PLCC-J32 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 32 | PLASTIC/EPOXY | RECTANGULAR | YES | Matte Tin (Sn) - annealed | J BEND | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | PLCC | LCC-32 | 32 | compliant | EAR99 | 8542.32.00.71 | PLG32 | 1992-01-01 | |||||||||||||||
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72V223L6BC
Integrated Device Technology Inc
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$17.1255 | No | No | Transferred | 9.216 kbit | 18 | 512X18 | 3.3 V | 4 ns | 166 MHz | 6 ns | OTHER FIFO | IT CAN ALSO BE CONFIGURED AS 1K X 9; RET... more | 9 | 1 | 512 | 512 words | SYNCHRONOUS | YES | PARALLEL | 15 mA | 35 µA | 3.45 V | 3.15 V | CMOS | COMMERCIAL | S-PBGA-B100 | Not Qualified | e0 | 3 | 70 °C | 225 | 30 | 100 | PLASTIC/EPOXY | LBGA | BGA100,10X10,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.5 mm | 11 mm | 11 mm | INTEGRATED DEVICE TECHNOLOGY INC | CABGA | 11 X 11 MM, 1 MM PITCH, BGA-100 | 100 | not_compliant | EAR99 | 8542.32.00.71 | BC100 | 1998-11-01 | ||||||
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5962-8753103XA
Integrated Device Technology Inc
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$17.5153 | No | No | Transferred | 4.608 kbit | 9 | 512X9 | 5 V | 80 ns | 10 MHz | 100 ns | OTHER FIFO | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 900 µA | 100 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-STD-883 | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.211 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | CDIP | CERAMIC, DIP-28 | 28 | not_compliant | EAR99 | 8542.32.00.71 | CD28 | 1990-01-01 | |||||
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7204L12JG8
Renesas Electronics Corporation
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$17.8999 | Yes | Yes | Active | 36.864 kbit | 9 | 4KX9 | 5 V | 12 ns | 50 MHz | 20 ns | BI-DIRECTIONAL FIFO | 1 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 12 mA | 120 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PQCC-J32 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 3.556 mm | 13.9954 mm | 11.4554 mm | RENESAS ELECTRONICS CORP | PLCC | 32 | compliant | NLR | 8542320071 | PLG32 | Renesas Electronics | ||||||||
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7201LA50DB
Integrated Device Technology Inc
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$19.5679 | No | No | Transferred | 4.608 kbit | 9 | 512X9 | 5 V | 50 ns | 15 MHz | 65 ns | OTHER FIFO | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | NO | PARALLEL | 900 µA | 100 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.211 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | CDIP | 0.600 INCH, CERAMIC, DIP-28 | 28 | not_compliant | EAR99 | 8542.32.00.71 | CD28 | 1988-01-01 | ||||||
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72V85L15PAG
Integrated Device Technology Inc
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$21.7415 | Yes | Yes | Transferred | 73.728 kbit | 9 | 8KX9 | 3.3 V | 15 ns | 40 MHz | 25 ns | OTHER FIFO | RETRANSMIT | 1 | 8000 | 8.192 k | ASYNCHRONOUS | NO | PARALLEL | 5 mA | 100 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G56 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 56 | PLASTIC/EPOXY | TSSOP | TSSOP56,.3,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | MATTE TIN | GULL WING | 500 µm | DUAL | 1.2 mm | 14 mm | 6.1 mm | INTEGRATED DEVICE TECHNOLOGY INC | TSSOP | TSSOP-56 | 56 | compliant | EAR99 | 8542.32.00.71 | PAG56 | 1996-03-01 | |||||||
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7204L12JG
Renesas Electronics Corporation
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$21.9241 | Yes | Yes | Active | 36.864 kbit | 9 | 4KX9 | 5 V | 12 ns | 50 MHz | 20 ns | BI-DIRECTIONAL FIFO | 1 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 12 mA | 120 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PQCC-J32 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 3.556 mm | 13.9954 mm | 11.4554 mm | RENESAS ELECTRONICS CORP | PLCC | 32 | compliant | NLR | 8542320071 | PLG32 | Renesas Electronics | ||||||||
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72V06L25JGI
Integrated Device Technology Inc
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$22.2338 | Yes | Yes | Transferred | 147.456 kbit | 9 | 16KX9 | 3.3 V | 25 ns | 35 ns | RETRANSMIT | 1 | 16000 | 16.384 k | ASYNCHRONOUS | NO | PARALLEL | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLCC | LCC-32 | 32 | compliant | EAR99 | 8542.32.00.71 | PLG32 | 1988-01-01 |