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IS42S16400J-6TL
Integrated Silicon Solution Inc
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$1.2067 | Yes | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | 166 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | NO | YES | 1,2,4,8,FP | 80 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2 | TSOP2, TSOP54,.46,32 | 54 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | |||||||||||
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IS42S16100H-7BL
Integrated Silicon Solution Inc
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$1.2379 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 143 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 60 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PBGA-B60 | Not Qualified | 70 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,7X15,25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1.2 mm | 10.1 mm | 6.4 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA60,7X15,25 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | |||||||||||||
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IS42S16100H-7TLI
Integrated Silicon Solution Inc
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$1.2469 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 143 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 3.5 mA | 70 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G50 | Not Qualified | 85 °C | -40 °C | 50 | PLASTIC/EPOXY | TSOP2 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP50,.46,32 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | ||||||||||||
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IS42S16400J-7TL
Integrated Silicon Solution Inc
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$1.2616 | Yes | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | 143 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | NO | YES | 1,2,4,8,FP | 70 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | e3 | 70 °C | 260 | 30 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2 | TSOP2, TSOP54,.46,32 | 54 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | |||||||
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IS42S16100H-6BL
Integrated Silicon Solution Inc
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$1.2826 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 166 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 70 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PBGA-B60 | Not Qualified | 70 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,7X15,25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1.2 mm | 10.1 mm | 6.4 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA60,7X15,25 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | |||||||||||||
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MT47H64M16HR-3 IT:H
Micron Technology Inc
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$1.3162 | Yes | Yes | Obsolete | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | 450 ps | 333 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 7 mA | 230 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B84 | Not Qualified | e1 | 85 °C | -40 °C | 260 | 30 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | MICRON TECHNOLOGY INC | TFBGA, BGA84,9X15,32 | unknown | 3A991 | 8542.32.00.32 | Micron | |||||||
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IS43LR32200C-6BLI-TR
Integrated Silicon Solution Inc
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$1.3354 | Yes | Yes | Active | 67.1089 Mbit | 32 | 2MX32 | 1.8 V | 5.5 ns | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B90 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | ||||||||||||||||||||
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S27KS0642GABHI030
Infineon Technologies AG
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$1.3419 | Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 1.8 V | 35 ns | 200 MHz | HYPERRAM | SELF REFRESH | COMMON | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 250 µA | 25 µA | 2 V | 1.7 V | CMOS | R-PBGA-B24 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 24 | PLASTIC/EPOXY | VBGA | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1 mm | 8 mm | 6 mm | INFINEON TECHNOLOGIES AG | FBGA-24 | compliant | EAR99 | 8542.32.00.02 | Infineon | ||||||||||||||||
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AS4C8M16SA-6TCNTR
Alliance Memory Inc
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$1.3457 | Yes | Active | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5 ns | 166 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 3 V | 70 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | e3 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ALLIANCE MEMORY INC | TSOP2-54 | compliant | EAR99 | 8542.32.00.02 | Alliance Memory | ||||||||||
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IS42S16100H-6BLI
Integrated Silicon Solution Inc
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$1.3891 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 166 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 3.5 mA | 80 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,7X15,25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1.2 mm | 10.1 mm | 6.4 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA60,7X15,25 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. |