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IS42S16100H-6TL
Integrated Silicon Solution Inc
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$0.9780 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 166 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 70 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G50 | Not Qualified | 70 °C | 50 | PLASTIC/EPOXY | TSOP2 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP50,.46,32 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | ||||||||||||||
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MTC4C10163S1UC48BA1
Micron Technology Inc
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$1.0000 | Obsolete | DDR5 DRAM MODULE | MICRON TECHNOLOGY INC | compliant | Micron | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS42S16400J-7B2LI
Integrated Silicon Solution Inc
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$1.0000 | Yes | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | 143 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | NO | YES | 1,2,4,8,FP | 70 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,7X15,25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1.2 mm | 10.1 mm | 6.4 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA60,7X15,25 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | BGA | 60 | |||||||||||
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IS43LR16800G-6BLI-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Yes | Active | 134.2177 Mbit | 16 | 8MX16 | 1.8 V | 5.5 ns | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B60 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.1 mm | 10 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||||||
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IS46LQ32256A-062BLA2-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 8.5899 Gbit | 32 | 256MX32 | 1.1 V | 1.6 GHz | 8192 | MULTI BANK PAGE BURST | LPDDR4 DRAM | COMMON | 16,32 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 16,32 | 200 µA | 530 µA | 1.17 V | 1.06 V | CMOS | R-PBGA-B200 | 105 °C | -40 °C | 260 | AEC-Q100 | 30 | 200 | PLASTIC/EPOXY | TFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.1 mm | 14.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | compliant | ||||||||||||||||||
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IS42SM16200D-6BLI
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 33.5544 Mbit | 16 | 2MX16 | 3.3 V | 5.5 ns | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | YES | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | S-PBGA-B54 | e1 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | ||||||||||||||||||||
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MT40A512M16LY-075:E
Micron Technology Inc
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$1.0000 | Yes | Obsolete | 8.5899 Gbit | 16 | 512MX16 | 1.2 V | 8192 | MULTI BANK PAGE BURST | DDR4 DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | NO | YES | 1.26 V | 1.14 V | CMOS | OTHER | R-PBGA-B96 | e1 | 95 °C | 260 | 30 | 96 | PLASTIC/EPOXY | TFBGA | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 13.5 mm | 7.5 mm | MICRON TECHNOLOGY INC | TFBGA, | compliant | EAR99 | 8542.32.00.36 | Micron | 2017-07-13 | |||||||||||||||
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IS45S16100H-7BLA2-TR
Integrated Silicon Solution Inc
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$1.0060 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | 105 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1.2 mm | 10.1 mm | 6.4 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | |||||||||||||||||||||
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MT41K256M8DA-125:K
Micron Technology Inc
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$1.0137 | Yes | Active | 2.1475 Gbit | 8 | 256MX8 | 1.35 V | 225 ps | 800 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 8 | 12 mA | 156 µA | 1.45 V | 1.283 V | CMOS | OTHER | R-PBGA-B78 | Not Qualified | e1 | 3 | 95 °C | 260 | 30 | 78 | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 10.5 mm | 8 mm | MICRON TECHNOLOGY INC | TFBGA, BGA78,9X13,32 | not_compliant | EAR99 | 8542.32.00.36 | Micron | BGA | 78 | |||||||
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MT41K128M16JT-107:K
Micron Technology Inc
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$1.0137 | Yes | Active | 2.1475 Gbit | 16 | 128MX16 | 1.35 V | 195 ps | 933 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | COMMON | 8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 8 | 12 mA | 219 µA | 1.45 V | 1.283 V | CMOS | OTHER | R-PBGA-B96 | Not Qualified | e1 | 85 °C | 96 | PLASTIC/EPOXY | TFBGA | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | MICRON TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.36 | Micron |