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IS42S32160D-7BL
Integrated Silicon Solution Inc
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$1.0000 | Yes | Obsolete | 536.8709 Mbit | 32 | 16MX32 | 3.3 V | 5.4 ns | 143 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 4 mA | 300 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PBGA-B90 | Not Qualified | 70 °C | 90 | PLASTIC/EPOXY | TFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | DSBGA | TFBGA, BGA90,9X15,32 | 90 | compliant | EAR99 | 8542.32.00.28 | Integrated Silicon Solution Inc. | ||||||||||
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IS46LQ32128A-062BLA1
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 4.295 Gbit | 32 | 128MX32 | 1.6 GHz | MULTI BANK PAGE BURST | LPDDR4 DRAM | TERM PITCH-MAX; ALSO AVAILABLE WITH 1.7V TO 1.95V SUPPLY | COMMON | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | NO | 1.17 V | 1.06 V | CMOS | INDUSTRIAL | R-PBGA-B200 | 95 °C | -40 °C | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 850 µm | 14.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | FBGA-200 | compliant | EAR99 | 8542.32.00.36 | Integrated Silicon Solution Inc. | ||||||||||||||||||||
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IS46LQ16256AL-062BLA1
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.6 GHz | MULTI BANK PAGE BURST | LPDDR4X DRAM | TERM PITCH-MAX; ALSO AVAILABLE WITH 1.7V TO 1.95V SUPPLY | COMMON | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | NO | 1.17 V | 1.06 V | CMOS | INDUSTRIAL | R-PBGA-B200 | 95 °C | -40 °C | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 850 µm | 14.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | FBGA-200 | compliant | EAR99 | 8542.32.00.36 | Integrated Silicon Solution Inc. | ||||||||||||||||||||
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IS43R16320D-5BLI
Integrated Silicon Solution Inc
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$1.0000 | Yes | Yes | End Of Life | 536.8709 Mbit | 16 | 32MX16 | 2.6 V | 700 ps | 200 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 25 mA | 430 µA | 2.7 V | 2.5 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TBGA | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | BGA | TBGA, BGA60,9X12,40/32 | 60 | compliant | EAR99 | 8542.32.00.28 | Integrated Silicon Solution Inc. | ||||||
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IS43R16320D-6BLI
Integrated Silicon Solution Inc
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$1.0000 | Yes | Yes | End Of Life | 536.8709 Mbit | 16 | 32MX16 | 2.5 V | 700 ps | 166 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 25 mA | 370 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TBGA | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | BGA | TBGA, BGA60,9X12,40/32 | 60 | compliant | EAR99 | 8542.32.00.28 | Integrated Silicon Solution Inc. | ||||||
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IS43R32800D-5BLI
Integrated Silicon Solution Inc
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$1.0000 | Yes | Obsolete | 268.4355 Mbit | 32 | 8MX32 | 2.5 V | 700 ps | 200 MHz | 4096 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 5 mA | 480 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | S-PBGA-B144 | Not Qualified | 85 °C | -40 °C | 144 | PLASTIC/EPOXY | LFBGA | BGA144,12X12,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 12 mm | INTEGRATED SILICON SOLUTION INC | BGA | LFBGA, BGA144,12X12,32 | 144 | compliant | EAR99 | 8542.32.00.24 | Integrated Silicon Solution Inc. | |||||||||
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IS46LQ16128AL-062BLA1-TR
Integrated Silicon Solution Inc
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$1.0000 | Active | 2.1475 Gbit | 16 | 128MX16 | 1.1 V | 1.6 GHz | 8192 | MULTI BANK PAGE BURST | LPDDR4X DRAM | COMMON | 16,32 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 16,32 | 1.2 mA | 305 µA | 1.17 V | 1.06 V | CMOS | R-PBGA-B200 | 95 °C | -40 °C | AEC-Q100 | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 850 µm | 14.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | unknown | |||||||||||||||||||
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IS46LQ32256A-062BLA2-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 8.5899 Gbit | 32 | 256MX32 | 1.1 V | 1.6 GHz | 8192 | MULTI BANK PAGE BURST | LPDDR4 DRAM | COMMON | 16,32 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 16,32 | 200 µA | 530 µA | 1.17 V | 1.06 V | CMOS | R-PBGA-B200 | 105 °C | -40 °C | 260 | AEC-Q100 | 30 | 200 | PLASTIC/EPOXY | TFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.1 mm | 14.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | compliant | ||||||||||||||||
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IS42S32160D-7BLI
Integrated Silicon Solution Inc
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$1.0000 | Yes | Obsolete | 536.8709 Mbit | 32 | 16MX32 | 3.3 V | 5.4 ns | 143 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 4 mA | 300 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B90 | Not Qualified | 85 °C | -40 °C | 90 | PLASTIC/EPOXY | TFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | DSBGA | TFBGA, BGA90,9X15,32 | 90 | compliant | EAR99 | 8542.32.00.28 | Integrated Silicon Solution Inc. | |||||||||
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IS42SM16200D-6BLI
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 33.5544 Mbit | 16 | 2MX16 | 3.3 V | 5.5 ns | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | YES | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | S-PBGA-B54 | e1 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. |