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IS43LQ16256AL-062BLI-TR
Integrated Silicon Solution Inc
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$1.0000 | Active | DDR DRAM | INTEGRATED SILICON SOLUTION INC | unknown | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS46LQ16256A-062BLA2
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.6 GHz | MULTI BANK PAGE BURST | LPDDR4 DRAM | TERM PITCH-MAX; ALSO AVAILABLE WITH 1.7V TO 1.95V SUPPLY | COMMON | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | NO | 1.17 V | 1.06 V | CMOS | INDUSTRIAL | R-PBGA-B200 | 105 °C | -40 °C | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 850 µm | 14.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | compliant | FBGA-200 | EAR99 | 8542.32.00.36 | |||||||||||||||||||
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IS42S16320D-6BLI
Integrated Silicon Solution Inc
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$1.0000 | Yes | Obsolete | 536.8709 Mbit | 16 | 32MX16 | 3.3 V | 5.4 ns | 166 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 4 mA | 250 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B54 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 54 | PLASTIC/EPOXY | TFBGA | BGA54,9X9,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | compliant | TFBGA, BGA54,9X9,32 | EAR99 | 8542.32.00.28 | DSBGA | 54 | Integrated Silicon Solution Inc. | |||||
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IS46LQ16256A-062BLA1
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.6 GHz | MULTI BANK PAGE BURST | LPDDR4 DRAM | TERM PITCH-MAX; ALSO AVAILABLE WITH 1.7V TO 1.95V SUPPLY | COMMON | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | NO | 1.17 V | 1.06 V | CMOS | INDUSTRIAL | R-PBGA-B200 | 95 °C | -40 °C | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 850 µm | 14.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | compliant | FBGA-200 | EAR99 | 8542.32.00.36 | Integrated Silicon Solution Inc. | ||||||||||||||||||
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IS45S16160G-7BLA2
Integrated Silicon Solution Inc
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$1.0000 | Yes | End Of Life | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5.4 ns | 143 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 4 mA | 130 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B54 | Not Qualified | 105 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 54 | PLASTIC/EPOXY | TFBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | compliant | TFBGA, BGA54,9X9,32 | EAR99 | 8542.32.00.24 | BGA | 54 | Integrated Silicon Solution Inc. | |||||
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IS42S16160G-7BL
Integrated Silicon Solution Inc
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$1.0000 | Yes | Obsolete | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5.4 ns | 143 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 4 mA | 130 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | S-PBGA-B54 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 54 | PLASTIC/EPOXY | TFBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | compliant | TFBGA, BGA54,9X9,32 | EAR99 | 8542.32.00.24 | BGA | 54 | Integrated Silicon Solution Inc. | ||||||
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IS43LQ16128A-062BLI
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 2.1475 Gbit | 16 | 128MX16 | 1.6 GHz | MULTI BANK PAGE BURST | LPDDR4 DRAM | terminal pitch-max | COMMON | 16,32 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | NO | 16,32 | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B200 | 95 °C | -40 °C | 200 | PLASTIC/EPOXY | VFBGA | BGA200,12X22,32/25 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 850 µm | 14.5 mm | 10 mm | INTEGRATED SILICON SOLUTION INC | compliant | VFBGA, | EAR99 | 8542.32.00.36 | Integrated Silicon Solution Inc. | ||||||||||||||||
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IS43R16160D-5BLI
Integrated Silicon Solution Inc
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$1.0000 | Yes | End Of Life | 268.4355 Mbit | 16 | 16MX16 | 2.5 V | 700 ps | 200 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 4 mA | 480 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | compliant | TFBGA, BGA60,9X12,40/32 | EAR99 | 8542.32.00.24 | BGA | 60 | ||||||||
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IS43R86400D-5BL
Integrated Silicon Solution Inc
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$1.0000 | Yes | Yes | End Of Life | 536.8709 Mbit | 8 | 64MX8 | 2.6 V | 700 ps | 200 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 25 mA | 430 µA | 2.7 V | 2.5 V | CMOS | COMMERCIAL | R-PBGA-B60 | Not Qualified | e1 | 70 °C | 60 | PLASTIC/EPOXY | TBGA | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | compliant | TBGA, BGA60,9X12,40/32 | EAR99 | 8542.32.00.28 | BGA | 60 | ||||||
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IS45S16100H-7BLA2-TR
Integrated Silicon Solution Inc
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$1.0060 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | 105 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1.2 mm | 10.1 mm | 6.4 mm | INTEGRATED SILICON SOLUTION INC | compliant | TFBGA, | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. |