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21 - 30 of 65,633 results
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BB170X
NXP Semiconductors
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$0.1942 | Yes | Obsolete | 1 | 260 | NXP SEMICONDUCTORS | SOD | 2 | SOD323 | unknown | NXP | |||||||||||||||||||||||||||||||||
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BBY6602VH6327XTSA1
Infineon Technologies AG
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$0.2123 | Yes | Active | VARIABLE CAPACITANCE DIODE | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | Tin (Sn) | INFINEON TECHNOLOGIES AG | compliant | Infineon | EAR99 | |||||||||||||||||||||||||||||||
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BB202,115
NXP Semiconductors
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$0.2138 | Yes | Obsolete | 30.85 pF | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 6 V | 1 | 8.59 % | 2.5 | ABRUPT | Not Qualified | R-PDSO-F2 | e3 | 1 | 85 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | NXP SEMICONDUCTORS | SOD | 2 | SOD523 | compliant | NXP | EAR99 | PLASTIC, SC-79, 2 PIN | 8541.10.00 | |||||||
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BBY40,235
NXP Semiconductors
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$0.2146 | Yes | Not Recommended | 29 pF | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | 10.34 % | 5 | VERY HIGH FREQUENCY | ABRUPT | R-PDSO-G3 | e3 | TO-236AB | 1 | 125 °C | -55 °C | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | TO-236 | 3 | SOT23 | compliant | NXP | EAR99 | 8541.10.00 | ||||||
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1SV325(TPH3,F)
Toshiba America Electronic Components
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$0.2206 | Yes | Active | 46.75 pF | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 10 V | 1 | 4 | ABRUPT | SMALL OUTLINE | TOSHIBA CORP | unknown | EAR99 | 8541.10.00.80 | ||||||||||||||||||||||||||||
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BB173X
NXP Semiconductors
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$0.2211 | Yes | Obsolete | e3 | 1 | 260 | 30 | Tin (Sn) | NXP SEMICONDUCTORS | SOD | 2 | SOD523 | unknown | NXP | EAR99 | 8541.10.00 | ||||||||||||||||||||||||||||
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BBY5802VH6327XTSA1
Infineon Technologies AG
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$0.2247 | Yes | Active | 18.3 pF | SILICON | 10 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 4.89 % | 1.15 | HYPERABRUPT | R-PDSO-F2 | e3 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | compliant | Infineon | EAR99 | R-PDSO-F2 | 8541.10.00.80 | |||||||||||
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BBY5303WE6327HTSA1
Infineon Technologies AG
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$0.2447 | Yes | Active | 5.3 pF | SILICON | 6 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 9.43 % | 1.8 | ULTRA HIGH FREQUENCY | HYPERABRUPT | R-PDSO-G2 | e3 | 1 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | compliant | Infineon | EAR99 | R-PDSO-G2 | 8541.10.00.80 | ||||||||||
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BB208-02,115
NXP Semiconductors
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$0.2539 | Yes | Obsolete | 10.1 pF | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 10 V | 1 | 3.7 | ABRUPT | Not Qualified | R-PDSO-F2 | e3 | 1 | 125 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | NXP SEMICONDUCTORS | SOD | 2 | SOD523 | compliant | NXP | EAR99 | PLASTIC, SC-79, 2 PIN | 8541.10.00 | ||||||||
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BBY40,215
NXP Semiconductors
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$0.2551 | Yes | Obsolete | 31 pF | 10 nA | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | 5 | VERY HIGH FREQUENCY | 28 V | ABRUPT | Not Qualified | R-PDSO-G3 | e3 | 1 | 125 °C | -55 °C | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | TO-236 | 3 | SOT23 | compliant | NXP | EAR99 | PLASTIC, SMD, 3 PIN | 8541.10.00 |