Parametric results for: BAV17 under Rectifier Diodes
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BAV170HYT116
ROHM Semiconductor
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$0.1089 | Active | 215 mA | 1.25 V | 3 µs | 5 nA | 250 mW | SILICON | RECTIFIER DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 90 V | 2 | HIGH RELIABILITY | GENERAL PURPOSE | 4 A | 1 | 75 V | R-PDSO-G3 | e3 | 150 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | ROHM CO LTD | unknown | 2020-06-15 | ROHM Semiconductor | |||||||||||||||||||
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BAV170HYFHT116
ROHM Semiconductor
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$0.1268 | Active | 215 mA | 1.25 V | 3 µs | 5 nA | 250 mW | SILICON | RECTIFIER DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 90 V | 2 | HIGH RELIABILITY | GENERAL PURPOSE | 4 A | 1 | 75 V | R-PDSO-G3 | e3 | AEC-Q101 | 150 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | ROHM CO LTD | unknown | 2020-06-15 | ROHM Semiconductor | ||||||||||||||||||
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BAV170
Micro Commercial Components
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Check for Price | Active | 215 mA | 900 mV | 3 µs | 5 nA | 250 mW | SILICON | 85 V | RECTIFIER DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 85 V | 2 | LOW LEAKAGE CURRENT | GENERAL PURPOSE | 500 mA | 1 | 75 V | Not Qualified | R-PDSO-G3 | e0 | 150 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | DUAL | MICRO COMMERCIAL COMPONENTS CORP | compliant | SOT-23, 3 PIN | 3 | EAR99 | 8541.10.00.70 | |||||||||||||||
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BAV170DW
PanJit Semiconductor
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Check for Price | Yes | Yes | Active | 200 mA | 3 µs | 200 mW | SILICON | RECTIFIER DIODE | 2 BANKS, COMMON CATHODE, 2 ELEMENTS | YES | 100 V | 4 | R-PDSO-G6 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 6 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | PAN JIT INTERNATIONAL INC | compliant | R-PDSO-G6 | 6 | EAR99 | 8541.10.00.70 | |||||||||||||||||||||
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S-LBAV170LT1G
LRC Leshan Radio Co Ltd
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Check for Price | Yes | Active | 215 mA | 900 mV | 3 ns | 150 mW | SILICON | RECTIFIER DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 85 V | 2 | HIGH RELIABILITY | 4 A | R-PDSO-G3 | AEC-Q101 | 150 °C | -65 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | LESHAN RADIO CO LTD | unknown | R-PDSO-G3 | EAR99 | 8541.10.00.70 | |||||||||||||||||||||
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BAV17
Luguang Electronic Technology Co Ltd
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Check for Price | Active | DO-35 | DO-35 | |||||||||||||||||||||||||||||||||||||||||||||||
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BAV170QA
Nexperia
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Check for Price | Yes | Active | 320 mA | 3 µs | 325 mW | SILICON | RECTIFIER DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 85 V | 2 | R-PDSO-N3 | e3 | AEC-Q101; IEC-60134 | 1 | 150 °C | -55 °C | 260 | 30 | CATHODE | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | NO LEAD | DUAL | NEXPERIA | compliant | 2017-02-17 | DFN1010D-3, 3 PIN | EAR99 | 8541.10.00.70 | |||||||||||||||||
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BAV170_R1_10001
PanJit Semiconductor
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Check for Price | Yes | Active | 200 mA | 900 mV | 3 µs | SILICON | RECTIFIER DIODE | YES | 100 V | 1 | 4 A | 1 | R-PDSO-G3 | e3 | TO-236AB | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | PANJIT INTERNATIONAL INC | compliant | SOT-23, 3 PIN | ||||||||||||||||||||||||
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LBAV170LT3G
LRC Leshan Radio Co Ltd
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Check for Price | Yes | Active | 215 mA | 900 mV | 3 µs | 150 mW | SILICON | RECTIFIER DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 85 V | 2 | 500 mA | R-PDSO-G3 | 150 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | LESHAN RADIO CO LTD | unknown | R-PDSO-G3 | EAR99 | 8541.10.00.70 | |||||||||||||||||||||
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BAV17
TDK Micronas GmbH
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Check for Price | No | Transferred | 250 mA | 1 V | 50 ns | RECTIFIER DIODE | SINGLE | NO | 25 V | 1 | 1 | e0 | 150 °C | Tin/Lead (Sn/Pb) | ITT SEMICONDUCTOR | unknown | EAR99 |