Part Details for W9816G6CH-6 by Winbond Electronics Corp
Overview of W9816G6CH-6 by Winbond Electronics Corp
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for W9816G6CH-6
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 384 |
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RFQ | ||
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Quest Components | 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, 50 Pin Plastic SMT | 3883 |
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$1.5435 / $4.4100 | Buy Now |
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Quest Components | 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, 50 Pin Plastic SMT | 243 |
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$2.7750 / $4.5000 | Buy Now |
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Chip1Cloud | 512K �� 2 BANKS �� 16 BITS SDRAM | 13300 |
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RFQ |
Part Details for W9816G6CH-6
W9816G6CH-6 CAD Models
W9816G6CH-6 Part Data Attributes
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W9816G6CH-6
Winbond Electronics Corp
Buy Now
Datasheet
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Compare Parts:
W9816G6CH-6
Winbond Electronics Corp
Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, ROHS COMPLIANT, TSOP2-50
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | WINBOND ELECTRONICS CORP | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, | |
| Pin Count | 50 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 5.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G50 | |
| Length | 20.95 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Width | 10.16 mm |
Alternate Parts for W9816G6CH-6
This table gives cross-reference parts and alternative options found for W9816G6CH-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W9816G6CH-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| V54C317162VCT-6 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Mosel Vitelic Corporation | W9816G6CH-6 vs V54C317162VCT-6 |
| K4S161622D-TP60 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | Samsung Semiconductor | W9816G6CH-6 vs K4S161622D-TP60 |
| AS4LC1M16S0-7TC | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Alliance Semiconductor Corporation | W9816G6CH-6 vs AS4LC1M16S0-7TC |
| K4S161622H-UC60T | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-50 | Samsung Semiconductor | W9816G6CH-6 vs K4S161622H-UC60T |
| K4S161622D-TI60 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50 | Samsung Semiconductor | W9816G6CH-6 vs K4S161622D-TI60 |
| V54C316162VCT7 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Mosel Vitelic Corporation | W9816G6CH-6 vs V54C316162VCT7 |
| W9816G6CH-7 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, ROHS COMPLIANT, TSOP2-50 | Winbond Electronics Corp | W9816G6CH-6 vs W9816G6CH-7 |
| MT48LC1M16A1TG-6SIT | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 | Micron Technology Inc | W9816G6CH-6 vs MT48LC1M16A1TG-6SIT |
| MB81F161622C-60FN | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Limited | W9816G6CH-6 vs MB81F161622C-60FN |
| IS42S16100C1-7TLI-TR | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50 | Integrated Silicon Solution Inc | W9816G6CH-6 vs IS42S16100C1-7TLI-TR |