Part Details for W9812G6JH-75 by Winbond Electronics Corp
Overview of W9812G6JH-75 by Winbond Electronics Corp
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Consumer Electronics
Computing and Data Storage
Part Details for W9812G6JH-75
W9812G6JH-75 CAD Models
W9812G6JH-75 Part Data Attributes
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W9812G6JH-75
Winbond Electronics Corp
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Datasheet
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W9812G6JH-75
Winbond Electronics Corp
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT,TSOP2-54
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | WINBOND ELECTRONICS CORP | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP54,.46,32 | |
Pin Count | 54 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 133 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G54 | |
JESD-609 Code | e3 | |
Length | 22.22 mm | |
Memory Density | 134217728 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 8388608 words | |
Number of Words Code | 8000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 8MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP54,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.07 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for W9812G6JH-75
This table gives cross-reference parts and alternative options found for W9812G6JH-75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W9812G6JH-75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NT5SV8M16DT-75B | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Nanya Technology Corporation | W9812G6JH-75 vs NT5SV8M16DT-75B |
K4S281632F-UC75 | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | Samsung Semiconductor | W9812G6JH-75 vs K4S281632F-UC75 |
K4S281632F-TC75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | W9812G6JH-75 vs K4S281632F-TC75 |
K4S281632E-TC75T | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | Samsung Semiconductor | W9812G6JH-75 vs K4S281632E-TC75T |
HY57V281620ETP-H | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | SK Hynix Inc | W9812G6JH-75 vs HY57V281620ETP-H |
NT5SV8M16DS-75B | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Nanya Technology Corporation | W9812G6JH-75 vs NT5SV8M16DS-75B |
K4S281632D-TC75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | W9812G6JH-75 vs K4S281632D-TC75 |
NT5SE8M16DS-75B | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Nanya Technology Corporation | W9812G6JH-75 vs NT5SE8M16DS-75B |
MT48LC8M16A2TG-75:G | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | W9812G6JH-75 vs MT48LC8M16A2TG-75:G |
K4S281632K-UC750 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 | Samsung Semiconductor | W9812G6JH-75 vs K4S281632K-UC750 |