Part Details for W981216AH-75 by Winbond Electronics Corp
Overview of W981216AH-75 by Winbond Electronics Corp
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for W981216AH-75
W981216AH-75 CAD Models
W981216AH-75 Part Data Attributes
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W981216AH-75
Winbond Electronics Corp
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Datasheet
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W981216AH-75
Winbond Electronics Corp
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | WINBOND ELECTRONICS CORP | |
| Part Package Code | TSOP2 | |
| Package Description | 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | |
| Pin Count | 54 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.19 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for W981216AH-75
This table gives cross-reference parts and alternative options found for W981216AH-75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W981216AH-75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4S281632I-UP750 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | Samsung Semiconductor | W981216AH-75 vs K4S281632I-UP750 |
| V54C3128164VCI7I | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | W981216AH-75 vs V54C3128164VCI7I |
| UPD45128163G5-A75A-9JF | Synchronous DRAM, 8MX16, 5.4ns, MOS, PDSO54, PLASTIC, TSOP2-54 | Elpida Memory Inc | W981216AH-75 vs UPD45128163G5-A75A-9JF |
| H57V1262GTR-70J | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | SK Hynix Inc | W981216AH-75 vs H57V1262GTR-70J |
| IS42S16800B-7T-TR | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54 | Integrated Silicon Solution Inc | W981216AH-75 vs IS42S16800B-7T-TR |
| MT48LC8M16A2TG-75TR | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | W981216AH-75 vs MT48LC8M16A2TG-75TR |
| IBM0312164CT3B-75A | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | IBM | W981216AH-75 vs IBM0312164CT3B-75A |
| MT48LC8M16P-75M:G | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Micron Technology Inc | W981216AH-75 vs MT48LC8M16P-75M:G |
| MT48LC8M16A2TG-75LAT:G | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | W981216AH-75 vs MT48LC8M16A2TG-75LAT:G |
| V54C3128164VBI7I | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, GREEN, TSOP2-54 | ProMOS Technologies Inc | W981216AH-75 vs V54C3128164VBI7I |