Transistors
VP1120N5
Description: Power Field-Effect Transistor, 1.8A I(D), 200V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Overview of VP1120N5 by Supertex Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Renewable Energy Automotive

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Part Data Attributes for VP1120N5 by Supertex Inc

VP1120N5
Supertex Inc
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SUPERTEX INC
Part Package Code
SFM
Package Description
TO-220, 3 PIN
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
1.8 A
Drain-source On Resistance-Max
5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
45 W
Pulsed Drain Current-Max (IDM)
7 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. VP1120N5
    Supertex Inc
    Power Field-Effect Transistor, 1.8A I(D), 200V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
    VS

Alternate Parts for VP1120N5

This table gives cross-reference parts and alternative options found for VP1120N5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VP1120N5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
VP1120N5 TRANSISTOR,MOSFET,P-CHANNEL,200V V(BR)DSS,1.8A I(D),TO-220AB Microchip Technology Inc VP1120N5 vs VP1120N5
Part Number Description Manufacturer Compare
RFP5P15 Power Field-Effect Transistor, 5A I(D), 150V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor VP1120N5 vs RFP5P15
STW45NM50 N-channel 500 V, 0.08 Ohm ty., 45 A MDmesh Power MOSFET in a TO-247 package STMicroelectronics VP1120N5 vs STW45NM50
2SK3298-AZ Switching N-Channel Power Mosfet, MP-45F, /Bag Renesas Electronics Corporation VP1120N5 vs 2SK3298-AZ
SPP15P10P Power Field-Effect Transistor, 15A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG VP1120N5 vs SPP15P10P
STW18NM80 N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-247 package STMicroelectronics VP1120N5 vs STW18NM80
TK20J60W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V Toshiba America Electronic Components VP1120N5 vs TK20J60W5
TK20E60W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V Toshiba America Electronic Components VP1120N5 vs TK20E60W5
STW26NM60N-H 20A, 600V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 STMicroelectronics VP1120N5 vs STW26NM60N-H
934055716127 Power Field-Effect Transistor Nexperia VP1120N5 vs 934055716127
SMP2P20 Power Field-Effect Transistor, 1.75A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Vishay Siliconix VP1120N5 vs SMP2P20

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