VHB100-12
Advanced Semiconductor Inc
Description: RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6

Overview of VHB100-12 by Advanced Semiconductor Inc

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Part Data Attributes for VHB100-12 by Advanced Semiconductor Inc

VHB100-12
Advanced Semiconductor Inc
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
ASI SEMICONDUCTOR INC
Package Description
FLANGE MOUNT, O-CXFM-F6
Pin Count
6
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
EMITTER
Collector Current-Max (IC)
20 A
Collector-Base Capacitance-Max
390 pF
Collector-Emitter Voltage-Max
18 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
10
Highest Frequency Band
VERY HIGH FREQUENCY BAND
JESD-30 Code
O-CXFM-F6
Number of Elements
1
Number of Terminals
6
Operating Temperature-Max
200 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
NPN
Power Dissipation-Max (Abs)
270 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
UNSPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Want to compare parts?
  1. VHB100-12
    Advanced Semiconductor Inc
    RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6
    VS

Alternate Parts for VHB100-12

This table gives cross-reference parts and alternative options found for VHB100-12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VHB100-12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SD1477 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc VHB100-12 vs SD1477
Part Number Description Manufacturer Compare
2N3632 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-60, TO-60, 3 PIN Solitron Devices Inc VHB100-12 vs 2N3632
SD1272 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN Microsemi Corporation VHB100-12 vs SD1272
BLW81 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, Advanced Semiconductor Inc VHB100-12 vs BLW81
2N6080 VHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC VHB100-12 vs 2N6080
SD1433 UHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.280 INCH, PLASTIC, M122, 4 PIN STMicroelectronics VHB100-12 vs SD1433
MRF5175 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PACKAGE STYLE .280 4L STUD, 4 PIN Advanced Semiconductor Inc VHB100-12 vs MRF5175
TVU025 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, FM-4 Advanced Semiconductor Inc VHB100-12 vs TVU025
SD1135 UHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.280 INCH, PLASTIC, M122, 4 PIN STMicroelectronics VHB100-12 vs SD1135
MS1501 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.280 INCH, PLASTIC, M122, 4 PIN Microsemi Corporation VHB100-12 vs MS1501
PTB20134 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN Infineon Technologies AG VHB100-12 vs PTB20134

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