Datasheets
V826616B24SXTG-A1 by: Mosel Vitelic Corporation

DDR DRAM Module, 16MX64, 0.8ns, CMOS, SODIMM-200

Part Details for V826616B24SXTG-A1 by Mosel Vitelic Corporation

Overview of V826616B24SXTG-A1 by Mosel Vitelic Corporation

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Part Details for V826616B24SXTG-A1

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V826616B24SXTG-A1 Part Data Attributes:

V826616B24SXTG-A1 Mosel Vitelic Corporation
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V826616B24SXTG-A1 Mosel Vitelic Corporation DDR DRAM Module, 16MX64, 0.8ns, CMOS, SODIMM-200
Part Life Cycle Code Obsolete
Ihs Manufacturer MOSEL-VITELIC
Part Package Code MODULE
Package Description DIMM,
Pin Count 200
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Mode SINGLE BANK PAGE BURST
Access Time-Max 0.8 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-XDMA-N200
Memory Density 1073741824 bit
Memory IC Type DDR DRAM MODULE
Memory Width 64
Number of Functions 1
Number of Ports 1
Number of Terminals 200
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX64
Package Body Material UNSPECIFIED
Package Code DIMM
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Position DUAL

Alternate Parts for V826616B24SXTG-A1

This table gives cross-reference parts and alternative options found for V826616B24SXTG-A1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V826616B24SXTG-A1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYS64D16001GDL-6-B DDR DRAM Module, 16MX64, 0.7ns, CMOS, SODIMM-200 Infineon Technologies AG V826616B24SXTG-A1 vs HYS64D16001GDL-6-B
M470L1624FT0-LA2 DDR DRAM Module, 16MX64, 0.75ns, CMOS, SODIMM-200 Samsung Semiconductor V826616B24SXTG-A1 vs M470L1624FT0-LA2
MT4VDDT1664HG-202XX DDR DRAM Module, 16MX64, 0.8ns, CMOS, MO-224, SODIMM-200 Micron Technology Inc V826616B24SXTG-A1 vs MT4VDDT1664HG-202XX
MC-45D16CD641KS-C80 DDR DRAM Module, 16MX64, 0.8ns, MOS, SODIMM-200 Elpida Memory Inc V826616B24SXTG-A1 vs MC-45D16CD641KS-C80
M470L1714ET0-LA2 DDR DRAM Module, 16MX64, 0.75ns, CMOS, SODIMM-200 Samsung Semiconductor V826616B24SXTG-A1 vs M470L1714ET0-LA2
M470L1624BT0-CB0 DDR DRAM Module, 16MX64, 0.75ns, CMOS, SODIMM-200 Samsung Semiconductor V826616B24SXTG-A1 vs M470L1624BT0-CB0
MT8VDDT1664HY-262XX DDR DRAM Module, 16MX64, 0.75ns, CMOS, LEAD FREE, SODIMM-200 Micron Technology Inc V826616B24SXTG-A1 vs MT8VDDT1664HY-262XX
M470L1624FT0-LB3 DDR DRAM Module, 16MX64, 0.7ns, CMOS, SODIMM-200 Samsung Semiconductor V826616B24SXTG-A1 vs M470L1624FT0-LB3
MT4HTF1664HIY-53EXX DDR DRAM Module, 16MX64, CMOS, LEAD FREE, MO-224, SODIMM-200 Micron Technology Inc V826616B24SXTG-A1 vs MT4HTF1664HIY-53EXX
MT8VDDT1664HDY-262XX DDR DRAM Module, 16MX64, 0.75ns, CMOS, LEAD FREE, SODIMM-200 Micron Technology Inc V826616B24SXTG-A1 vs MT8VDDT1664HDY-262XX

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