Datasheets
UPD45128163G5-A75I-9JF-E by: Elpida Memory Inc

Synchronous DRAM, 8MX16, 5.4ns, MOS, PDSO54, ROHS COMPLIANT, PLASTIC, TSOP2-54

Part Details for UPD45128163G5-A75I-9JF-E by Elpida Memory Inc

Overview of UPD45128163G5-A75I-9JF-E by Elpida Memory Inc

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Applications Industrial Automation

Part Details for UPD45128163G5-A75I-9JF-E

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UPD45128163G5-A75I-9JF-E Part Data Attributes:

UPD45128163G5-A75I-9JF-E Elpida Memory Inc
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UPD45128163G5-A75I-9JF-E Elpida Memory Inc Synchronous DRAM, 8MX16, 5.4ns, MOS, PDSO54, ROHS COMPLIANT, PLASTIC, TSOP2-54
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ELPIDA MEMORY INC
Part Package Code TSOP2
Package Description TSOP2, TSOP54,.46,32
Pin Count 54
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001 A
Supply Current-Max 0.24 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology MOS
Temperature Grade INDUSTRIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16 mm

Alternate Parts for UPD45128163G5-A75I-9JF-E

This table gives cross-reference parts and alternative options found for UPD45128163G5-A75I-9JF-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPD45128163G5-A75I-9JF-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
UPD45128163G5-A75L-9JF Synchronous DRAM, 8MX16, 5.4ns, MOS, PDSO54, PLASTIC, TSOP2-54 Elpida Memory Inc UPD45128163G5-A75I-9JF-E vs UPD45128163G5-A75L-9JF
V54C3128164VBT6I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, TSOP2-54 ProMOS Technologies Inc UPD45128163G5-A75I-9JF-E vs V54C3128164VBT6I
MT48LC8M16P-75MIT Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Micron Technology Inc UPD45128163G5-A75I-9JF-E vs MT48LC8M16P-75MIT
IS42SM16800E-7TLI Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc UPD45128163G5-A75I-9JF-E vs IS42SM16800E-7TLI
HY57V281620BT-7 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54 SK Hynix Inc UPD45128163G5-A75I-9JF-E vs HY57V281620BT-7
V54C3128164VEUI7I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, GREEN, TSOP2-54 ProMOS Technologies Inc UPD45128163G5-A75I-9JF-E vs V54C3128164VEUI7I
HY57V281620HCT-K Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc UPD45128163G5-A75I-9JF-E vs HY57V281620HCT-K
V54C3128164VBLI7 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc UPD45128163G5-A75I-9JF-E vs V54C3128164VBLI7
HM5212165FLTD-75 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Hitachi Ltd UPD45128163G5-A75I-9JF-E vs HM5212165FLTD-75
HY57V281620BT-K Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54 SK Hynix Inc UPD45128163G5-A75I-9JF-E vs HY57V281620BT-K
Part Number Description Manufacturer Compare
IS45S16800B-7TA Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc UPD45128163G5-A75I-9JF-E vs IS45S16800B-7TA
KM44S32030BT-FH Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor UPD45128163G5-A75I-9JF-E vs KM44S32030BT-FH
K4S280432A-TL1L0 Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor UPD45128163G5-A75I-9JF-E vs K4S280432A-TL1L0
GM72V281641ALT-8 Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, LG Semicon Co Ltd UPD45128163G5-A75I-9JF-E vs GM72V281641ALT-8
M12S128168A-7TG Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc UPD45128163G5-A75I-9JF-E vs M12S128168A-7TG
V54C3128404VBLI8PC Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc UPD45128163G5-A75I-9JF-E vs V54C3128404VBLI8PC
K4S280432D-TI1L Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor UPD45128163G5-A75I-9JF-E vs K4S280432D-TI1L
V54C3128164VBT6 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54 ProMOS Technologies Inc UPD45128163G5-A75I-9JF-E vs V54C3128164VBT6
V54C3128404VCUI8IPC Synchronous DRAM, 32MX4, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc UPD45128163G5-A75I-9JF-E vs V54C3128404VCUI8IPC
K4S280432A-TL100 Synchronous DRAM, 32MX4, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor UPD45128163G5-A75I-9JF-E vs K4S280432A-TL100

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