Part Details for TPC8002 by Toshiba America Electronic Components
Overview of TPC8002 by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for TPC8002
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 418 |
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RFQ |
Part Details for TPC8002
TPC8002 CAD Models
TPC8002 Part Data Attributes
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TPC8002
Toshiba America Electronic Components
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Datasheet
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TPC8002
Toshiba America Electronic Components
TRANSISTOR 11 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-6J1B, 8 PIN, FET General Purpose Power
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 157 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.022 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 2.4 W | |
Power Dissipation-Max (Abs) | 2.4 W | |
Pulsed Drain Current-Max (IDM) | 44 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for TPC8002
This table gives cross-reference parts and alternative options found for TPC8002. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TPC8002, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF7413PBF-1 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | International Rectifier | TPC8002 vs IRF7413PBF-1 |
BSO302SN | Power Field-Effect Transistor, 9.8A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Infineon Technologies AG | TPC8002 vs BSO302SN |
SI4890DY-T1-E3 | Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | TPC8002 vs SI4890DY-T1-E3 |
2SK2442 | Power Field-Effect Transistor, 7A I(D), 30V, 0.048ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET | SANYO Electric Co Ltd | TPC8002 vs 2SK2442 |
FSS232 | Power Field-Effect Transistor, 9A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | SANYO Electric Co Ltd | TPC8002 vs FSS232 |
IRF7471 | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | TPC8002 vs IRF7471 |
TPCA8021-H | TRANSISTOR 27 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-5Q1A, 8 PIN, FET General Purpose Power | Toshiba America Electronic Components | TPC8002 vs TPCA8021-H |
IRF7413TRPBF-1 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | International Rectifier | TPC8002 vs IRF7413TRPBF-1 |
IRF7471TR | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | TPC8002 vs IRF7471TR |
IRF7821TRPBF | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | International Rectifier | TPC8002 vs IRF7821TRPBF |