Part Details for TMS465169-50DGE by Texas Instruments
Overview of TMS465169-50DGE by Texas Instruments
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for TMS465169-50DGE
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 4M X 16 EDO DRAM, 50 ns, PDSO50 | 10 |
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$15.0000 / $20.0000 | Buy Now |
Part Details for TMS465169-50DGE
TMS465169-50DGE CAD Models
TMS465169-50DGE Part Data Attributes:
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TMS465169-50DGE
Texas Instruments
Buy Now
Datasheet
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TMS465169-50DGE
Texas Instruments
4MX16 EDO DRAM, 50ns, PDSO50, 0.400 INCH, PLASTIC, TSOP-50
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Part Package Code | TSOP | |
| Package Description | TSOP2, TSOP50,.46,32 | |
| Pin Count | 50 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FAST PAGE WITH EDO | |
| Access Time-Max | 50 ns | |
| Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PDSO-G50 | |
| Length | 20.95 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | EDO DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP50,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | NO | |
| Standby Current-Max | 0.0005 A | |
| Supply Current-Max | 0.13 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | MOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 10.16 mm |
Alternate Parts for TMS465169-50DGE
This table gives cross-reference parts and alternative options found for TMS465169-50DGE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TMS465169-50DGE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TMS464169-50DGE | 4MX16 EDO DRAM, 50ns, PDSO50 | Texas Instruments | TMS465169-50DGE vs TMS464169-50DGE |
| K4E641612B-TL500 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | TMS465169-50DGE vs K4E641612B-TL500 |
| K4E641612C-TC50 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | TMS465169-50DGE vs K4E641612C-TC50 |
| K4E661612C-TL500 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | TMS465169-50DGE vs K4E661612C-TL500 |
| HY51V65164ASLTC-50 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | TMS465169-50DGE vs HY51V65164ASLTC-50 |
| HM5164165ALTT-5 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Hitachi Ltd | TMS465169-50DGE vs HM5164165ALTT-5 |
| VG26VS65165BT-5 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Vanguard International Semiconductor Corporation | TMS465169-50DGE vs VG26VS65165BT-5 |
| HYB3165165BTL-50 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Infineon Technologies AG | TMS465169-50DGE vs HYB3165165BTL-50 |
| HM5165165TT-5 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Hitachi Ltd | TMS465169-50DGE vs HM5165165TT-5 |
| K4E661612D-TL50 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | TMS465169-50DGE vs K4E661612D-TL50 |