Datasheets
TMS465169-40DGE by: Texas Instruments

4MX16 EDO DRAM, 40ns, PDSO50

Part Details for TMS465169-40DGE by Texas Instruments

Overview of TMS465169-40DGE by Texas Instruments

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Part Details for TMS465169-40DGE

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TMS465169-40DGE Part Data Attributes:

TMS465169-40DGE Texas Instruments
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TMS465169-40DGE Texas Instruments 4MX16 EDO DRAM, 40ns, PDSO50
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description TSOP2, TSOP50,.46,32
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 40 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O Type COMMON
JESD-30 Code R-PDSO-G50
Length 20.95 mm
Memory Density 67108864 bit
Memory IC Type EDO DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP50,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh NO
Standby Current-Max 0.0005 A
Supply Current-Max 0.16 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology MOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16 mm

Alternate Parts for TMS465169-40DGE

This table gives cross-reference parts and alternative options found for TMS465169-40DGE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TMS465169-40DGE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYB3166165AT-40 EDO DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Infineon Technologies AG TMS465169-40DGE vs HYB3166165AT-40
TMS465169P-40DGE 4MX16 EDO DRAM, 40ns, PDSO50 Texas Instruments TMS465169-40DGE vs TMS465169P-40DGE
TMS464169P-40DGE 4MX16 EDO DRAM, 40ns, PDSO50 Texas Instruments TMS465169-40DGE vs TMS464169P-40DGE
TC5164165AFT-40 IC 4M X 16 EDO DRAM, 40 ns, PDSO50, 0.400 INCH, PLASTIC, TSOP-50, Dynamic RAM Toshiba America Electronic Components TMS465169-40DGE vs TC5164165AFT-40
VG26VS64165BT-4 EDO DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation TMS465169-40DGE vs VG26VS64165BT-4
HYB3164165BT-40 EDO DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Infineon Technologies AG TMS465169-40DGE vs HYB3164165BT-40
HYB3164165AT-40 EDO DRAM, 4MX16, 40ns, CMOS, PDSO50 Siemens TMS465169-40DGE vs HYB3164165AT-40
TC5164165BFT-40 IC 4M X 16 EDO DRAM, 40 ns, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50, Dynamic RAM Toshiba America Electronic Components TMS465169-40DGE vs TC5164165BFT-40
TC5165165BFTS-40 IC 4M X 16 EDO DRAM, 40 ns, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50, Dynamic RAM Toshiba America Electronic Components TMS465169-40DGE vs TC5165165BFTS-40
TC5165165BFT-40 IC 4M X 16 EDO DRAM, 40 ns, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50, Dynamic RAM Toshiba America Electronic Components TMS465169-40DGE vs TC5165165BFT-40
Part Number Description Manufacturer Compare
MT4LC4M16U6TG-52 EDO DRAM, 4MX16, 52ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Micron Technology Inc TMS465169-40DGE vs MT4LC4M16U6TG-52
K4F661612D-TL500 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor TMS465169-40DGE vs K4F661612D-TL500
HM5164165ALTT-5 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Hitachi Ltd TMS465169-40DGE vs HM5164165ALTT-5
K4F641611C-TC60 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor TMS465169-40DGE vs K4F641611C-TC60
HY51V65163HGLT-6 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 SK Hynix Inc TMS465169-40DGE vs HY51V65163HGLT-6
K4F641612B-TC450 Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor TMS465169-40DGE vs K4F641612B-TC450
K4E661611B-TC50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Samsung Semiconductor TMS465169-40DGE vs K4E661611B-TC50
HYB3164165AT-60 EDO DRAM, 4MX16, 60ns, CMOS, PDSO50 Siemens TMS465169-40DGE vs HYB3164165AT-60
IBM0164165BT3C-50 EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 X 0.825 INCH, PLASTIC, TSOP2-50 IBM TMS465169-40DGE vs IBM0164165BT3C-50
MSM51V65160-50TS-1K Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 OKI Electric Industry Co Ltd TMS465169-40DGE vs MSM51V65160-50TS-1K

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