| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| TLE2062BMJGB | Texas Instruments | JFET-Input Low Power High Drive Dual Operational Amplifier 8-CDIP -55 to 125 |
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
TEXAS INSTRUMENTS INC
|
|
Part Package Code
|
DIP
|
|
Package Description
|
DIP, DIP8,.3
|
|
Pin Count
|
8
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.33.00.01
|
|
Samacsys Manufacturer
|
Texas Instruments
|
|
Amplifier Type
|
OPERATIONAL AMPLIFIER
|
|
Architecture
|
VOLTAGE-FEEDBACK
|
|
Average Bias Current-Max (IIB)
|
0.03 µA
|
|
Bias Current-Max (IIB) @25C
|
0.00006 µA
|
|
Common-mode Reject Ratio-Min
|
65 dB
|
|
Common-mode Reject Ratio-Nom
|
90 dB
|
|
Frequency Compensation
|
YES
|
|
Input Offset Current-Max (IIO)
|
0.015 µA
|
|
Input Offset Voltage-Max
|
1000 µV
|
|
JESD-30 Code
|
R-GDIP-T8
|
|
JESD-609 Code
|
e0
|
|
Length
|
9.58 mm
|
|
Low-Bias
|
YES
|
|
Low-Offset
|
NO
|
|
Micropower
|
YES
|
|
Neg Supply Voltage Limit-Max
|
-19 V
|
|
Neg Supply Voltage-Nom (Vsup)
|
-5 V
|
|
Number of Functions
|
2
|
|
Number of Terminals
|
8
|
|
Operating Temperature-Max
|
125 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
CERAMIC, GLASS-SEALED
|
|
Package Code
|
DIP
|
|
Package Equivalence Code
|
DIP8,.3
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
IN-LINE
|
|
Packing Method
|
TUBE
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Power
|
NO
|
|
Programmable Power
|
NO
|
|
Qualification Status
|
Not Qualified
|
|
Screening Level
|
38535Q/M;38534H;883B
|
|
Seated Height-Max
|
5.08 mm
|
|
Slew Rate-Min
|
1.8 V/us
|
|
Slew Rate-Nom
|
3.4 V/us
|
|
Supply Current-Max
|
0.65 mA
|
|
Supply Voltage Limit-Max
|
19 V
|
|
Supply Voltage-Nom (Vsup)
|
5 V
|
|
Surface Mount
|
NO
|
|
Technology
|
BIFET
|
|
Temperature Grade
|
MILITARY
|
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Pitch
|
2.54 mm
|
|
Terminal Position
|
DUAL
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
|
Unity Gain BW-Nom
|
2000
|
|
Voltage Gain-Min
|
500
|
|
Wideband
|
NO
|
|
Width
|
7.62 mm
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TL062MJGB | DUAL OP-AMP, 9000uV OFFSET-MAX, 1MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8 | Rochester Electronics LLC | TLE2062BMJGB vs TL062MJGB |
| TLE2062MP | JFET-Input Low Power High Drive Dual Operational Amplifier 8-PDIP -55 to 125 | Texas Instruments | TLE2062BMJGB vs TLE2062MP |
| TL062MJG | Military-grade, dual, 30-V, 1-MHz, In to V+, JFET-input operational amplifier 8-CDIP -55 to 125 | Texas Instruments | TLE2062BMJGB vs TL062MJG |
| 5962-9080801MPA | DUAL OP-AMP, 7000uV OFFSET-MAX, 1.3MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8 | Rochester Electronics LLC | TLE2062BMJGB vs 5962-9080801MPA |
| 8102302PA | Military-grade, dual, 30-V, 1-MHz, In to V+, JFET-input operational amplifier 8-CDIP -55 to 125 | Texas Instruments | TLE2062BMJGB vs 8102302PA |
| 5962-9080803QPX | DUAL OP-AMP, 5000uV OFFSET-MAX, 1.3MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8 | Texas Instruments | TLE2062BMJGB vs 5962-9080803QPX |
| TA75062P | IC DUAL OP-AMP, 15000 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDIP8, 0.300 INCH, 2.54 MM PITCH, PLASTIC, DIP-8, Operational Amplifier | Toshiba America Electronic Components | TLE2062BMJGB vs TA75062P |
| TL062CJG | Dual Low-Power JFET-Input General-Purpose Operational Amplifier 8-CDIP 0 to 70 | Texas Instruments | TLE2062BMJGB vs TL062CJG |
| 5962-9080801MPX | DUAL OP-AMP, 7000uV OFFSET-MAX, 1.3MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8 | Texas Instruments | TLE2062BMJGB vs 5962-9080801MPX |
| 8102302PX | DUAL OP-AMP, 9000uV OFFSET-MAX, 1MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8 | Texas Instruments | TLE2062BMJGB vs 8102302PX |
