Datasheets
THLY12N11B70 by: Toshiba America Electronic Components

IC 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM

Part Details for THLY12N11B70 by Toshiba America Electronic Components

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Part Details for THLY12N11B70

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THLY12N11B70 Part Data Attributes

THLY12N11B70 Toshiba America Electronic Components
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THLY12N11B70 Toshiba America Electronic Components IC 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Part Package Code MODULE
Package Description DIMM, DIMM144,32
Pin Count 144
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Mode SINGLE BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 143 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N144
Memory Density 1073741824 bit
Memory IC Type SYNCHRONOUS DRAM MODULE
Memory Width 64
Number of Functions 1
Number of Ports 1
Number of Terminals 144
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM144,32
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 8192
Self Refresh YES
Standby Current-Max 0.004 A
Supply Current-Max 0.68 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 0.8 mm
Terminal Position DUAL

Alternate Parts for THLY12N11B70

This table gives cross-reference parts and alternative options found for THLY12N11B70. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of THLY12N11B70, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
V436616Y04VTG-10PC Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 Mosel Vitelic Corporation THLY12N11B70 vs V436616Y04VTG-10PC
M464S1724DTS-C7C Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 Samsung Semiconductor THLY12N11B70 vs M464S1724DTS-C7C
KMM464S1724BT1-GL Synchronous DRAM Module, 16MX64, 6ns, CMOS Samsung Semiconductor THLY12N11B70 vs KMM464S1724BT1-GL
HYM72V16M656T6-P Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 SK Hynix Inc THLY12N11B70 vs HYM72V16M656T6-P
IBM13T16644NPA-10T Synchronous DRAM Module, 16MX64, 9ns, CMOS, SODIMM-144 IBM THLY12N11B70 vs IBM13T16644NPA-10T
HYS64V16221GDL-7.5-C2 Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 Infineon Technologies AG THLY12N11B70 vs HYS64V16221GDL-7.5-C2
W3DG6418V7AD1-SG Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, ROHS COMPLIANT, SO-DIMM-144 Microsemi Corporation THLY12N11B70 vs W3DG6418V7AD1-SG
HB52RD168DB-A6FL Synchronous DRAM Module, 16MX4, 6ns, CMOS, SODIMM-144 Hitachi Ltd THLY12N11B70 vs HB52RD168DB-A6FL
GMM26417227ANTG-75 Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, LG Semicon Co Ltd THLY12N11B70 vs GMM26417227ANTG-75
MC-4516CD64S-A10 Synchronous DRAM Module, 16MX64, 6ns, MOS, SODIMM-144 NEC Electronics Group THLY12N11B70 vs MC-4516CD64S-A10

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