Part Details for THLY12N11B70 by Toshiba America Electronic Components
Overview of THLY12N11B70 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for THLY12N11B70
THLY12N11B70 CAD Models
THLY12N11B70 Part Data Attributes
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THLY12N11B70
Toshiba America Electronic Components
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Datasheet
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THLY12N11B70
Toshiba America Electronic Components
IC 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Part Package Code | MODULE | |
Package Description | DIMM, DIMM144,32 | |
Pin Count | 144 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.32 | |
Access Mode | SINGLE BANK PAGE BURST | |
Access Time-Max | 5.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 143 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-XDMA-N144 | |
Memory Density | 1073741824 bit | |
Memory IC Type | SYNCHRONOUS DRAM MODULE | |
Memory Width | 64 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 144 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 16MX64 | |
Output Characteristics | 3-STATE | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Equivalence Code | DIMM144,32 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Self Refresh | YES | |
Standby Current-Max | 0.004 A | |
Supply Current-Max | 0.68 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | NO LEAD | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL |
Alternate Parts for THLY12N11B70
This table gives cross-reference parts and alternative options found for THLY12N11B70. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of THLY12N11B70, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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V436616Y04VTG-10PC | Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 | Mosel Vitelic Corporation | THLY12N11B70 vs V436616Y04VTG-10PC |
M464S1724DTS-C7C | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 | Samsung Semiconductor | THLY12N11B70 vs M464S1724DTS-C7C |
KMM464S1724BT1-GL | Synchronous DRAM Module, 16MX64, 6ns, CMOS | Samsung Semiconductor | THLY12N11B70 vs KMM464S1724BT1-GL |
HYM72V16M656T6-P | Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 | SK Hynix Inc | THLY12N11B70 vs HYM72V16M656T6-P |
IBM13T16644NPA-10T | Synchronous DRAM Module, 16MX64, 9ns, CMOS, SODIMM-144 | IBM | THLY12N11B70 vs IBM13T16644NPA-10T |
HYS64V16221GDL-7.5-C2 | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 | Infineon Technologies AG | THLY12N11B70 vs HYS64V16221GDL-7.5-C2 |
W3DG6418V7AD1-SG | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, ROHS COMPLIANT, SO-DIMM-144 | Microsemi Corporation | THLY12N11B70 vs W3DG6418V7AD1-SG |
HB52RD168DB-A6FL | Synchronous DRAM Module, 16MX4, 6ns, CMOS, SODIMM-144 | Hitachi Ltd | THLY12N11B70 vs HB52RD168DB-A6FL |
GMM26417227ANTG-75 | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, | LG Semicon Co Ltd | THLY12N11B70 vs GMM26417227ANTG-75 |
MC-4516CD64S-A10 | Synchronous DRAM Module, 16MX64, 6ns, MOS, SODIMM-144 | NEC Electronics Group | THLY12N11B70 vs MC-4516CD64S-A10 |