Part Details for SUP85N10-10-E3 by Vishay Intertechnologies
Overview of SUP85N10-10-E3 by Vishay Intertechnologies
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SUP85N10-10-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
06J8578
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Newark | N Channel Mosfet, 100V, 85A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:85A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Vishay SUP85N10-10-E3 Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$4.0700 | Buy Now |
DISTI #
74AC1984
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Newark | Transistor, Mosfet, Transistor Polarity:N Channel, Continuous Drain Current Id:85A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.012Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation Pd:250W, Rohs Compliant: Yes |Vishay SUP85N10-10-E3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$4.3400 / $6.9300 | Buy Now |
DISTI #
SUP85N10-10-E3
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Avnet Americas | Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SUP85N10-10-E3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 9 Weeks, 0 Days Container: Tube | 0 |
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$1.9101 / $2.4266 | Buy Now |
DISTI #
781-SUP85N10-10-E3
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Mouser Electronics | MOSFET 100V N-CH 175 DEG.C RoHS: Compliant | 946 |
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$2.9700 / $6.3700 | Buy Now |
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Future Electronics | 100V N-CH 175 DEG.C RATED TRENCH RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube | 0Tube |
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$2.9200 / $3.2100 | Buy Now |
DISTI #
SUP85N10-10-E3
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TTI | MOSFET 100V N-CH 175 DEG.C pbFree: Pb-Free Min Qty: 500 Package Multiple: 500 Container: Tube |
Americas - 13500 In Stock |
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$2.9400 / $3.0100 | Buy Now |
DISTI #
SUP85N10-10-E3
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TME | Transistor: N-MOSFET, unipolar, 100V, 60A, 250W, TO220AB Min Qty: 1 | 359 |
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$2.0500 / $3.0700 | Buy Now |
DISTI #
SUP85N10-10-E3
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Avnet Asia | Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB (Alt: SUP85N10-10-E3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 11 Weeks, 0 Days | 0 |
|
$1.9305 / $2.1752 | Buy Now |
DISTI #
SUP85N10-10-E3
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EBV Elektronik | Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB (Alt: SUP85N10-10-E3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 100V 85A 10.5m10V30A 3V250uA 1PCSNChannel TO-220AB MOSFETs ROHS | 778 |
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$2.1993 / $3.2124 | Buy Now |
Part Details for SUP85N10-10-E3
SUP85N10-10-E3 CAD Models
SUP85N10-10-E3 Part Data Attributes:
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SUP85N10-10-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUP85N10-10-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 85A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 9 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 280 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 85 A | |
Drain-source On Resistance-Max | 0.0105 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Pulsed Drain Current-Max (IDM) | 240 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for SUP85N10-10-E3
This table gives cross-reference parts and alternative options found for SUP85N10-10-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUP85N10-10-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF2807PBF | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | SUP85N10-10-E3 vs IRF2807PBF |
IRF540NPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | SUP85N10-10-E3 vs IRF540NPBF |