There are no models available for this part yet.
Overview of STW55NE10 by STMicroelectronics
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 4 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for STW55NE10 by STMicroelectronics
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Bristol Electronics | 507 |
|
RFQ | ||||
| Bristol Electronics | 40 |
|
RFQ | ||||
| Quest Components | 55 A, 100 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | 32 |
|
$3.6750 / $5.5125 | Buy Now | ||
| Quest Components | 55 A, 100 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | 17 |
|
$2.7563 / $5.5125 | Buy Now |
CAD Models for STW55NE10 by STMicroelectronics
Part Data Attributes for STW55NE10 by STMicroelectronics
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
STMICROELECTRONICS
|
|
Part Package Code
|
TO-247
|
|
Package Description
|
TO-247, 3 PIN
|
|
Pin Count
|
3
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
STMicroelectronics
|
|
Avalanche Energy Rating (Eas)
|
350 mJ
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
100 V
|
|
Drain Current-Max (ID)
|
55 A
|
|
Drain-source On Resistance-Max
|
0.027 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-247
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
JESD-609 Code
|
e0
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
200 W
|
|
Pulsed Drain Current-Max (IDM)
|
220 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for STW55NE10
This table gives cross-reference parts and alternative options found for STW55NE10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW55NE10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NDB706AL | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | STW55NE10 vs NDB706AL |
| IPB80N06S2LH5ATMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STW55NE10 vs IPB80N06S2LH5ATMA1 |
| IXFH12N100F | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | STW55NE10 vs IXFH12N100F |
| F10F6N | Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | STW55NE10 vs F10F6N |
| STP9NK65Z | N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET | STMicroelectronics | STW55NE10 vs STP9NK65Z |
| STD5NE10T4 | 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STMicroelectronics | STW55NE10 vs STD5NE10T4 |
| NDB705BEL | TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | National Semiconductor Corporation | STW55NE10 vs NDB705BEL |
| IXFH30N40Q | Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Littelfuse Inc | STW55NE10 vs IXFH30N40Q |
| SPB80N06S2-07 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STW55NE10 vs SPB80N06S2-07 |
| SPP80N03S2L-05 | Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STW55NE10 vs SPP80N03S2L-05 |