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N-channel 800 V, 1.9 Ohm typ., 4.3 A SuperMESH Power MOSFET in a TO-220 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K7926
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Newark | N Channel Mosfet, 800V, 4.3A To-220, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:4.3A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.75V, Msl:- Rohs Compliant: Yes |Stmicroelectronics STP5NK80Z Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1595 |
|
$0.9710 / $2.4300 | Buy Now |
DISTI #
497-7527-5-ND
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DigiKey | MOSFET N-CH 800V 4.3A TO220AB Min Qty: 1 Lead time: 13 Weeks Container: Tube |
200 In Stock |
|
$0.9277 / $2.2100 | Buy Now |
DISTI #
38K7926
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Avnet Americas | Trans MOSFET N-CH 800V 4.3A 3-Pin(3+Tab) TO-220 Tube - Bulk (Alt: 38K7926) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 649 Partner Stock |
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$2.4200 | Buy Now |
DISTI #
511-STP5NK80Z
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Mouser Electronics | MOSFET N-Ch 800 Volt 4.3 A Zener SuperMESH RoHS: Compliant | 0 |
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$0.9270 / $2.0800 | Order Now |
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STMicroelectronics | N-channel 800 V, 1.9 Ohm typ., 4.3 A SuperMESH Power MOSFET in a TO-220 package RoHS: Compliant Min Qty: 1 | 0 |
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$1.1300 / $2.0200 | Buy Now |
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Future Electronics | N-Channel 800 V 2.4 Ohm SuperMESH Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Container: Tube | 28138Tube |
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$0.4250 / $0.5200 | Buy Now |
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Future Electronics | N-Channel 800 V 2.4 Ohm SuperMESH Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Container: Tube | 2000Tube |
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$0.9100 / $1.1400 | Buy Now |
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Future Electronics | N-Channel 800 V 2.4 Ohm SuperMESH Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Container: Tube | 24Tube |
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$0.4050 / $0.4900 | Buy Now |
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Future Electronics | N-Channel 800 V 2.4 Ohm SuperMESH Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Lead time: 13 Weeks Container: Tube | 0Tube |
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$0.9100 / $1.1400 | Buy Now |
DISTI #
77791695
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Verical | Trans MOSFET N-CH 800V 4.3A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 12 Package Multiple: 1 Date Code: 2404 | Americas - 4656 |
|
$0.4073 / $1.1851 | Buy Now |
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STP5NK80Z
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP5NK80Z
STMicroelectronics
N-channel 800 V, 1.9 Ohm typ., 4.3 A SuperMESH Power MOSFET in a TO-220 package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 190 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 4.3 A | |
Drain-source On Resistance-Max | 2.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 110 W | |
Pulsed Drain Current-Max (IDM) | 17.2 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STP5NK80Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP5NK80Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFS620 | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | STP5NK80Z vs IRFS620 |
SPP47N10 | Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STP5NK80Z vs SPP47N10 |
IXFH14N80 | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | STP5NK80Z vs IXFH14N80 |
STP13NK50Z | 11A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | STP5NK80Z vs STP13NK50Z |
RFD14N06 | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | STP5NK80Z vs RFD14N06 |
SPP80N06S2L-06 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STP5NK80Z vs SPP80N06S2L-06 |
STW20NM60FD | N-CHANNEL 600V 0.26 Ohm 20A TO-247 FDmesh™ POWER MOSFET | STMicroelectronics | STP5NK80Z vs STW20NM60FD |
IXFH28N50Q | Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXYS Corporation | STP5NK80Z vs IXFH28N50Q |
IXFH26N50S | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247SMD, 3 PIN | IXYS Corporation | STP5NK80Z vs IXFH26N50S |
IXTK33N50 | Power Field-Effect Transistor, 33A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | Littelfuse Inc | STP5NK80Z vs IXTK33N50 |