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Transistors Power Field-Effect Transistors STP35NF10

Transistors
STP35NF10
STMicroelectronics
Description: N-Channel 100V - 0.030 Ohm - 40A - TO-220 LOW GATE CHARGE StripFET(TM) POWER MOSFET

Overview of STP35NF10 by STMicroelectronics

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 5 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for STP35NF10 by STMicroelectronics

Part # Manufacturer Description Stock Price Buy
DISTI # 26M3689
Newark Mosfet Transistor, N Channel, 40 A, 100 V, 35 Mohm, 10 V, 3 V Rohs Compliant: Yes |Stmicroelectronics STP35NF10 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $1.7600
  • 10 $1.4800
  • 100 $1.1300
  • 500 $0.9750
  • 1,000 $0.8110
$0.8110 / $1.7600 Buy Now
STMicroelectronics N-Channel 100V - 0.030 Ohm - 40A - TO-220 LOW GATE CHARGE StripFET(TM) POWER MOSFET RoHS: Compliant Min Qty: 1 1236
  • 1 $1.5100
  • 10 $1.3600
  • 25 $1.2800
  • 100 $1.0000
  • 500 $0.8500
$0.8500 / $1.5100 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220 40
  • 1 $4.0000
  • 9 $2.5000
  • 31 $2.2000
$2.2000 / $4.0000 Buy Now
ComSIT USA N-CHANNEL 100V-0.030 OHM-40A-TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET Power Field-Effect Transistor, 40A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant Stock EU - 600
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 5 92
  • 5 $1.7500
$1.7500 Buy Now

CAD Models for STP35NF10 by STMicroelectronics
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Part Data Attributes for STP35NF10 by STMicroelectronics
Parametric Data

STP35NF10
STMicroelectronics
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
STMICROELECTRONICS
Part Package Code
TO-220AB
Package Description
TO-220, 3 PIN
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Date Of Intro
1980-01-04
Samacsys Manufacturer
STMicroelectronics
Avalanche Energy Rating (Eas)
300 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
40 A
Drain-source On Resistance-Max
0.035 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
100 W
Pulsed Drain Current-Max (IDM)
160 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. STP35NF10
    STMicroelectronics
    N-Channel 100V - 0.030 Ohm - 40A - TO-220 LOW GATE CHARGE StripFET(TM) POWER MOSFET
    VS

Alternate Parts for STP35NF10

This table gives cross-reference parts and alternative options found for STP35NF10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP35NF10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NDB706AL 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Texas Instruments STP35NF10 vs NDB706AL
IPB80N06S2LH5ATMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STP35NF10 vs IPB80N06S2LH5ATMA1
IXFH12N100F Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation STP35NF10 vs IXFH12N100F
F10F6N Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN Shindengen Electronic Manufacturing Co Ltd STP35NF10 vs F10F6N
STP9NK65Z N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET STMicroelectronics STP35NF10 vs STP9NK65Z
STD5NE10T4 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics STP35NF10 vs STD5NE10T4
NDB705BEL TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power National Semiconductor Corporation STP35NF10 vs NDB705BEL
IXFH30N40Q Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Littelfuse Inc STP35NF10 vs IXFH30N40Q
SPB80N06S2-07 Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STP35NF10 vs SPB80N06S2-07
SPP80N03S2L-05 Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STP35NF10 vs SPP80N03S2L-05

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