Datasheets
STL22N65M5 by:
STMicroelectronics
Hongxing Electrical Ltd
STMicroelectronics
Not Found

N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package

Part Details for STL22N65M5 by STMicroelectronics

Results Overview of STL22N65M5 by STMicroelectronics

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Applications Industrial Automation Automotive Motor control systems

STL22N65M5 Information

STL22N65M5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STL22N65M5

Part # Distributor Description Stock Price Buy
DISTI # 89W1483
Newark Hv Mosfet Mdmesh |Stmicroelectronics STL22N65M5 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # 497-STL22N65M5CT-ND
DigiKey MOSFET N-CH 650V 15A PWRFLAT HV Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Temporarily Out of Stock
  • 1 $4.1600
  • 10 $2.7340
  • 100 $2.0776
  • 500 $1.7922
  • 1,000 $1.5425
  • 3,000 $1.4231
$1.4231 / $4.1600 Buy Now
DISTI # STL22N65M5
Avnet Americas Trans MOSFET N-CH 650V 15A 4-Pin Power Flat T/R - Tape and Reel (Alt: STL22N65M5) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel 0
  • 3,000 $1.4411
  • 6,000 $1.4321
  • 12,000 $1.4056
  • 18,000 $1.3800
  • 24,000 $1.3554
$1.3554 / $1.4411 Buy Now
DISTI # 511-STL22N65M5
Mouser Electronics MOSFETs N-Ch 650V .198Ohm 15A MDmesh M5 RoHS: Compliant 2895
  • 1 $4.2500
  • 10 $2.7900
  • 100 $2.1200
  • 500 $1.8800
  • 1,000 $1.6100
  • 3,000 $1.4200
$1.4200 / $4.2500 Buy Now
DISTI # E02:0323_06872203
Arrow Electronics Trans MOSFET N-CH Si 650V 15A 4-Pin Power Flat EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks Date Code: 2427 Europe - 3000
  • 3,000 $1.4479
$1.4479 Buy Now
STMicroelectronics N-channel 650 V, 180 mOhm typ., 15 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package RoHS: Compliant Min Qty: 1 2895
  • 1 $4.1700
  • 10 $2.7300
  • 25 $2.7300
  • 100 $2.0800
  • 250 $2.0800
  • 500 $1.8400
$1.8400 / $4.1700 Buy Now
Future Electronics POWER FLAT MLPD 8X8 4L RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks 0
  • 3,000 $1.5200
$1.5200 Buy Now
DISTI # 84948096
Verical Trans MOSFET N-CH Si 650V 15A 4-Pin Power Flat EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2427 Americas - 3000
  • 3,000 $1.4201
$1.4201 Buy Now
DISTI # STL22N65M5
TME Transistor: N-MOSFET, unipolar Min Qty: 1 0
  • 1 $2.8000
  • 10 $2.5200
  • 100 $2.2300
  • 500 $2.0000
  • 1,000 $1.8100
  • 3,000 $1.6700
  • 6,000 $1.5900
$1.5900 / $2.8000 RFQ
DISTI # STL22N65M5
Avnet Silica Trans MOSFET NCH 650V 15A 4Pin Power Flat TR (Alt: STL22N65M5) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STL22N65M5
EBV Elektronik Trans MOSFET NCH 650V 15A 4Pin Power Flat TR (Alt: STL22N65M5) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STL22N65M5

STL22N65M5 CAD Models

STL22N65M5 Part Data Attributes

STL22N65M5 STMicroelectronics
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STL22N65M5 STMicroelectronics N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer STMicroelectronics
Additional Feature BULK: 3000
Avalanche Energy Rating (Eas) 270 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.21 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 3.7 pF
JESD-30 Code S-PSSO-N4
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 60 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form NO LEAD
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

STL22N65M5 Related Parts

STL22N65M5 Frequently Asked Questions (FAQ)

  • The maximum junction temperature that the STL22N65M5 can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.

  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the device.

  • The recommended gate resistor value for the STL22N65M5 is between 10Ω to 100Ω. However, the optimal value depends on the specific application, switching frequency, and gate drive voltage. It's recommended to consult the application note or seek guidance from STMicroelectronics' support team.

  • Yes, the STL22N65M5 is suitable for high-reliability applications. It's manufactured using a robust process, and STMicroelectronics provides a range of reliability data, including FIT rates and MTBF calculations, to support its use in demanding applications.

  • To protect the STL22N65M5 from ESD, handle the device by the body, avoid touching the pins, and use an ESD wrist strap or mat. Ensure the PCB is designed with ESD protection in mind, and consider adding ESD protection devices, such as TVS diodes, to the circuit.