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Part Details for STGP8NC60KD by STMicroelectronics
Overview of STGP8NC60KD by STMicroelectronics
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STGP8NC60KD
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
61AC2099
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Newark | Igbt, 600V, 15A, To-220, Continuous Collector Current:15A, Collector Emitter Saturation Voltage:2.2V, Power Dissipation:65W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Product Range:- Rohs Compliant: Yes |Stmicroelectronics STGP8NC60KD Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 245 |
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$0.5190 | Buy Now |
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DISTI #
497-7481-5-ND
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DigiKey | IGBT 600V 15A TO220 Min Qty: 1 Lead time: 14 Weeks Container: Tube |
956 In Stock |
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$0.5487 / $1.4600 | Buy Now |
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DISTI #
STGP8NC60KD
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Avnet Americas | Trans IGBT Chip N-CH 600V 7A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGP8NC60KD) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days Container: Tube | 0 |
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$0.6111 / $0.6374 | Buy Now |
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DISTI #
61AC2099
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Avnet Americas | Trans IGBT Chip N-CH 600V 7A 3-Pin(3+Tab) TO-220 Tube - Bulk (Alt: 61AC2099) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 36 Partner Stock |
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$0.8160 / $1.7100 | Buy Now |
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DISTI #
511-STGP8NC60KD
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Mouser Electronics | IGBT Transistors N Ch 500V 0.21 15A Pwr MOSFET RoHS: Compliant | 198 |
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$0.5480 / $1.4600 | Buy Now |
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STMicroelectronics | 8 A, 600 V short-circuit rugged IGBT RoHS: Compliant Min Qty: 1 | 198 |
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$0.7700 / $1.4300 | Buy Now |
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Future Electronics | STGP8NC60K Series N-Channel 600V 8 A Short Circuit Rated PowerMESH IGBT - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Lead time: 14 Weeks Container: Bulk | 0Bulk |
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$0.5650 / $0.6900 | Buy Now |
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Future Electronics | STGP8NC60K Series N-Channel 600V 8 A Short Circuit Rated PowerMESH IGBT - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Lead time: 14 Weeks Container: Bulk | 0Bulk |
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$0.5650 / $0.6900 | Buy Now |
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Future Electronics | STGP8NC60K Series N-Channel 600V 8 A Short Circuit Rated PowerMESH IGBT - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Lead time: 14 Weeks Container: Tube | 0Tube |
|
$0.5650 / $0.6700 | Buy Now |
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DISTI #
STGP8NC60KD
|
TME | Transistor: IGBT, 600V, 8A, 65W, TO220AB Min Qty: 1 | 274 |
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$0.7300 / $1.1000 | Buy Now |
Part Details for STGP8NC60KD
STGP8NC60KD CAD Models
STGP8NC60KD Part Data Attributes
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STGP8NC60KD
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STGP8NC60KD
STMicroelectronics
New short circuit rugged "K" series
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | STMicroelectronics | |
| Collector Current-Max (IC) | 15 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 65 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 242 ns | |
| Turn-on Time-Nom (ton) | 23 ns |
Alternate Parts for STGP8NC60KD
This table gives cross-reference parts and alternative options found for STGP8NC60KD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STGP8NC60KD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGT1S3N60B3S | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | STGP8NC60KD vs HGT1S3N60B3S |
| HGTP7N60B3 | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | STGP8NC60KD vs HGTP7N60B3 |
| GT10J312 | TRANSISTOR 10 A, 600 V, N-CHANNEL IGBT, 2-10S1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | STGP8NC60KD vs GT10J312 |
| IXSH35N100A | Insulated Gate Bipolar Transistor, 70A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | STGP8NC60KD vs IXSH35N100A |
| IKA06N60TXKSA1 | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STGP8NC60KD vs IKA06N60TXKSA1 |
| IRG4PC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | STGP8NC60KD vs IRG4PC50U |
| IRG4PC30KD | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | STGP8NC60KD vs IRG4PC30KD |
| IXGH28N60BD1 | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | STGP8NC60KD vs IXGH28N60BD1 |
| HGTP7N60A4D | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | Fairchild Semiconductor Corporation | STGP8NC60KD vs HGTP7N60A4D |
| SGH40N60UFD | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Samsung Semiconductor | STGP8NC60KD vs SGH40N60UFD |