Datasheets
STGD3NB60K by: STMicroelectronics

10A, 600V, N-CHANNEL IGBT, TO-252AA, DPAK-3

Part Details for STGD3NB60K by STMicroelectronics

Overview of STGD3NB60K by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for STGD3NB60K

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STGD3NB60K Part Data Attributes

STGD3NB60K STMicroelectronics
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STGD3NB60K STMicroelectronics 10A, 600V, N-CHANNEL IGBT, TO-252AA, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-252AA
Package Description DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 35 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 220 ns
Turn-on Time-Nom (ton) 19 ns

Alternate Parts for STGD3NB60K

This table gives cross-reference parts and alternative options found for STGD3NB60K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STGD3NB60K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4RC10KTRL Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier STGD3NB60K vs IRG4RC10KTRL
IRG4RC10KTRL Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG STGD3NB60K vs IRG4RC10KTRL
SGR6N60UF Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 Fairchild Semiconductor Corporation STGD3NB60K vs SGR6N60UF
STGD3NB60H 6A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252, DPAK-3 STMicroelectronics STGD3NB60K vs STGD3NB60H
IRG4RC10KTR Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier STGD3NB60K vs IRG4RC10KTR
IRG4RC10K Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier STGD3NB60K vs IRG4RC10K
SGR2N60UFTM Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 Fairchild Semiconductor Corporation STGD3NB60K vs SGR2N60UFTM
IRG4RC10KTRPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG STGD3NB60K vs IRG4RC10KTRPBF
HGTD3N60B3S9A Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA Fairchild Semiconductor Corporation STGD3NB60K vs HGTD3N60B3S9A
IRG4RC10KPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier STGD3NB60K vs IRG4RC10KPBF

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