Datasheets
STGB3NB60HD by: STMicroelectronics

10A, 600V, N-CHANNEL IGBT, TO-263AB, TO-263, D2PAK-3

Part Details for STGB3NB60HD by STMicroelectronics

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Part Details for STGB3NB60HD

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STGB3NB60HD Part Data Attributes

STGB3NB60HD STMicroelectronics
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STGB3NB60HD STMicroelectronics 10A, 600V, N-CHANNEL IGBT, TO-263AB, TO-263, D2PAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 168 ns
Turn-on Time-Nom (ton) 16 ns

Alternate Parts for STGB3NB60HD

This table gives cross-reference parts and alternative options found for STGB3NB60HD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STGB3NB60HD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGT1S3N60B3S Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation STGB3NB60HD vs HGT1S3N60B3S
HGTP7N60B3 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation STGB3NB60HD vs HGTP7N60B3
GT10J312 TRANSISTOR 10 A, 600 V, N-CHANNEL IGBT, 2-10S1C, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components STGB3NB60HD vs GT10J312
IXSH35N100A Insulated Gate Bipolar Transistor, 70A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation STGB3NB60HD vs IXSH35N100A
IKA06N60TXKSA1 Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STGB3NB60HD vs IKA06N60TXKSA1
IRG4PC50U Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG STGB3NB60HD vs IRG4PC50U
IRG4PC30KD Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG STGB3NB60HD vs IRG4PC30KD
IXGH28N60BD1 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation STGB3NB60HD vs IXGH28N60BD1
HGTP7N60A4D Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation STGB3NB60HD vs HGTP7N60A4D
SGH40N60UFD Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Samsung Semiconductor STGB3NB60HD vs SGH40N60UFD

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