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Transistors / Power Field-Effect Transistors / STD6NF10T4
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STD6NF10T4 by: STMicroelectronics

N-CHANNEL 100V - 0.22 OHM - 6A DPAK LOW GATE CHARGE STripFET MOSFET

Part Details for STD6NF10T4 by STMicroelectronics

Overview of STD6NF10T4 by STMicroelectronics

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Price & Stock for STD6NF10T4

Part # Distributor Description Stock Price Buy
DISTI # 33R1170
Newark Mosfet, N Channel, 100V, 6A, Dpak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STD6NF10T4 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 497-7974-1-ND
DigiKey MOSFET N-CH 100V 6A DPAK Min Qty: 1 Lead time: 26 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 4677
In Stock
  • 1 $1.6100
  • 10 $1.0230
  • 100 $0.6832
  • 500 $0.5373
  • 1,000 $0.4903
  • 2,500 $0.4393
  • 5,000 $0.4078
  • 7,500 $0.3917
  • 12,500 $0.3875
$0.3875 / $1.6100 Buy Now
STMicroelectronics N-CHANNEL 100V - 0.22 OHM - 6A DPAK LOW GATE CHARGE STripFET MOSFET RoHS: Compliant Min Qty: 1 346
  • 1 $1.0400
  • 10 $0.8500
  • 100 $0.6600
  • 500 $0.5300
$0.5300 / $1.0400 Buy Now
Future Electronics N-Channel 100 V 0.25 Ohm Surface Mount STripFET™ Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Lead time: 26 Weeks Container: Reel 0
Reel
  • 2,500 $0.4200
  • 5,000 $0.4100
  • 7,500 $0.4050
  • 10,000 $0.4050
  • 12,500 $0.3950
$0.3950 / $0.4200 Buy Now
Future Electronics N-Channel 100 V 0.25 Ohm Surface Mount STripFET™ Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.4200
  • 5,000 $0.4100
  • 7,500 $0.4050
  • 10,000 $0.4050
  • 12,500 $0.3950
$0.3950 / $0.4200 Buy Now
Future Electronics N-Channel 100 V 0.25 Ohm Surface Mount STripFET™ Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.4050
  • 5,000 $0.4000
  • 7,500 $0.3950
  • 10,000 $0.3900
  • 12,500 $0.3800
$0.3800 / $0.4050 Buy Now
Future Electronics N-Channel 100 V 0.25 Ohm Surface Mount STripFET™ Power MosFet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.4050
  • 5,000 $0.4000
  • 7,500 $0.3950
  • 10,000 $0.3900
  • 12,500 $0.3800
$0.3800 / $0.4050 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-252AA 650
  • 1 $0.5625
  • 44 $0.3750
  • 161 $0.2625
$0.2625 / $0.5625 Buy Now
DISTI # STD6NF10T4
TME Transistor: N-MOSFET, unipolar, 100V, 4A, 30W, DPAK Min Qty: 1 0
  • 1 $0.5930
  • 10 $0.5210
  • 100 $0.4360
  • 500 $0.3910
  • 1,000 $0.3760
  • 2,500 $0.3580
  • 5,000 $0.3460
  • 12,500 $0.3330
$0.3330 / $0.5930 RFQ
DISTI # STD6NF10T4
Avnet Silica Trans MOSFET N-CH 100V 6A 3-Pin(2+Tab) DPAK T/R (Alt: STD6NF10T4) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STD6NF10T4
EBV Elektronik Trans MOSFET N-CH 100V 6A 3-Pin(2+Tab) DPAK T/R (Alt: STD6NF10T4) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
Sense Electronic Company Limited TO-252-3 5000
RFQ

Part Details for STD6NF10T4

STD6NF10T4 CAD Models

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STD6NF10T4 Part Data Attributes

Parametric Data
STD6NF10T4 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STD6NF10T4 STMicroelectronics N-CHANNEL 100V - 0.22 OHM - 6A DPAK LOW GATE CHARGE STripFET MOSFET
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-252AA
Package Description ROHS COMPLIANT, DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Additional Feature LOW THRESHOLD
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 30 W
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STD6NF10T4

This table gives cross-reference parts and alternative options found for STD6NF10T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD6NF10T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFH6N100Q Power Field-Effect Transistor, 6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Littelfuse Inc STD6NF10T4 vs IXFH6N100Q
STP40NF03L N-Channel 30V - 0.020 Ohm - 40A - TO-220 StripFET(TM) II MOSFET STMicroelectronics STD6NF10T4 vs STP40NF03L
IPB45N06S4L08ATMA2 Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG STD6NF10T4 vs IPB45N06S4L08ATMA2
IXFX90N20Q Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN Littelfuse Inc STD6NF10T4 vs IXFX90N20Q
IXFH15N80 Power Field-Effect Transistor, 15A I(D), 800V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc STD6NF10T4 vs IXFH15N80
IXFK90N20Q Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 Littelfuse Inc STD6NF10T4 vs IXFK90N20Q
IXKC20N60C Power Field-Effect Transistor, 14A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220LV, ISOPLUS220LV, 3 PIN Littelfuse Inc STD6NF10T4 vs IXKC20N60C
STD6NK50ZT4 N-CHANNEL 500V - 0.93͐2;6; - 5.6A DPAK Zener-Protected SuperMESH™ MOSFET STMicroelectronics STD6NF10T4 vs STD6NK50ZT4
IPB60R190C6 Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Infineon Technologies AG STD6NF10T4 vs IPB60R190C6
IPD90N06S306ATMA1 Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN Infineon Technologies AG STD6NF10T4 vs IPD90N06S306ATMA1

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