Part Details for IXFH6N100Q by Littelfuse Inc
Overview of IXFH6N100Q by Littelfuse Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for IXFH6N100Q
IXFH6N100Q CAD Models
IXFH6N100Q Part Data Attributes
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IXFH6N100Q
Littelfuse Inc
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Datasheet
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IXFH6N100Q
Littelfuse Inc
Power Field-Effect Transistor, 6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 700 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH6N100Q
This table gives cross-reference parts and alternative options found for IXFH6N100Q. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH6N100Q, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NDP706A | TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | National Semiconductor Corporation | IXFH6N100Q vs NDP706A |
| IRFS620 | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IXFH6N100Q vs IRFS620 |
| IXFH14N80 | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | IXFH6N100Q vs IXFH14N80 |
| SPP47N10 | Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IXFH6N100Q vs SPP47N10 |
| STP13NK50Z | 11A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | IXFH6N100Q vs STP13NK50Z |
| STH8NA60FI | 5A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN | STMicroelectronics | IXFH6N100Q vs STH8NA60FI |
| FQA48N20 | Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | IXFH6N100Q vs FQA48N20 |
| STW80N06-10 | 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | IXFH6N100Q vs STW80N06-10 |
| IPP14N03LA | Power Field-Effect Transistor, 30A I(D), 25V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IXFH6N100Q vs IPP14N03LA |
| STH7NA60 | 7.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | IXFH6N100Q vs STH7NA60 |