Part Details for STD2NK60Z-1 by STMicroelectronics
Overview of STD2NK60Z-1 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STD2NK60Z-1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-12555-5-ND
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DigiKey | MOSFET N-CH 600V 1.4A IPAK Min Qty: 1 Lead time: 12 Weeks Container: Tube |
3521 In Stock |
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$0.4343 / $1.0500 | Buy Now |
Part Details for STD2NK60Z-1
STD2NK60Z-1 CAD Models
STD2NK60Z-1 Part Data Attributes:
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STD2NK60Z-1
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD2NK60Z-1
STMicroelectronics
1.5A, 600V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-251AA | |
| Package Description | TO-251, IPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 90 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 1.5 A | |
| Drain-source On Resistance-Max | 8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STD2NK60Z-1
This table gives cross-reference parts and alternative options found for STD2NK60Z-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD2NK60Z-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 934057024118 | 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 | NXP Semiconductors | STD2NK60Z-1 vs 934057024118 |
| STD3NA50T4 | 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STMicroelectronics | STD2NK60Z-1 vs STD3NA50T4 |
| IXFH68N20 | Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, | IXYS Corporation | STD2NK60Z-1 vs IXFH68N20 |
| IRF620B | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STD2NK60Z-1 vs IRF620B |
| SPA16N50C3 | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN | Infineon Technologies AG | STD2NK60Z-1 vs SPA16N50C3 |
| STD7NK30Z | 5A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 | STMicroelectronics | STD2NK60Z-1 vs STD7NK30Z |
| IXFH32N50Q | Power Field-Effect Transistor, 32A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | IXYS Corporation | STD2NK60Z-1 vs IXFH32N50Q |
| IPD06N03LBG | Power Field-Effect Transistor, 50A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | STD2NK60Z-1 vs IPD06N03LBG |
| NP90N055VUG-E1-AY | Power MOSFETs for Automotive, MP-3ZP, /Embossed Tape | Renesas Electronics Corporation | STD2NK60Z-1 vs NP90N055VUG-E1-AY |
| BUK9614-30 | 69A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | STD2NK60Z-1 vs BUK9614-30 |