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N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
98Y2469
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Newark | Mosfet, N-Ch, 60V, 12A, To-252-3, Transistor Polarity:N Channel, Continuous Drain Current Id:12A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.06Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Dissipation Rohs Compliant: Yes |Stmicroelectronics STD12NF06L-1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 798 |
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$0.3720 / $0.9440 | Buy Now |
DISTI #
497-6730-5-ND
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DigiKey | MOSFET N-CH 60V 12A IPAK Min Qty: 1 Lead time: 26 Weeks Container: Tube |
1387 In Stock |
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$0.2741 / $0.8200 | Buy Now |
DISTI #
STD12NF06L-1
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Avnet Americas | Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STD12NF06L-1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
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$0.3029 / $0.3159 | Buy Now |
DISTI #
511-STD12NF06L-1
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Mouser Electronics | MOSFET N-Ch 60 Volt 12 Amp RoHS: Compliant | 15571 |
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$0.2740 / $0.8100 | Buy Now |
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STMicroelectronics | N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package RoHS: Compliant Min Qty: 1 | 15565 |
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$0.4000 / $0.7900 | Buy Now |
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Future Electronics | N-Channel 60 V 0.1 Ω STripFET II Power MosFet - TO-251 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Lead time: 26 Weeks Container: Tube | 0Tube |
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$0.2700 / $0.3200 | Buy Now |
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Future Electronics | N-Channel 60 V 0.1 Ω STripFET II Power MosFet - TO-251 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Lead time: 26 Weeks Container: Tube | 0Tube |
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$0.2700 / $0.3200 | Buy Now |
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Future Electronics | N-Channel 60 V 0.1 Ω STripFET II Power MosFet - TO-251 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Lead time: 26 Weeks Container: Tube | 0Tube |
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$0.2700 / $0.3200 | Buy Now |
DISTI #
STD12NF06L-1
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TME | Transistor: N-MOSFET, STripFET™ II, unipolar, 60V, 12A, 30W, IPAK Min Qty: 1 | 174 |
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$0.3480 / $0.7860 | Buy Now |
DISTI #
STD12NF06L-1
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Avnet Silica | Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Tube (Alt: STD12NF06L-1) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 17 Weeks, 0 Days | Silica - 245100 |
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Buy Now |
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STD12NF06L-1
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD12NF06L-1
STMicroelectronics
N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-251 | |
Package Description | ROHS COMPLIANT, IPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 26 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.12 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 30 W | |
Pulsed Drain Current-Max (IDM) | 48 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STD12NF06L-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD12NF06L-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFS620 | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | STD12NF06L-1 vs IRFS620 |
SPP47N10 | Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STD12NF06L-1 vs SPP47N10 |
IXFH14N80 | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | STD12NF06L-1 vs IXFH14N80 |
STP13NK50Z | 11A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | STD12NF06L-1 vs STP13NK50Z |
RFD14N06 | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | STD12NF06L-1 vs RFD14N06 |
SPP80N06S2L-06 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STD12NF06L-1 vs SPP80N06S2L-06 |
STW20NM60FD | N-CHANNEL 600V 0.26 Ohm 20A TO-247 FDmesh™ POWER MOSFET | STMicroelectronics | STD12NF06L-1 vs STW20NM60FD |
IXFH28N50Q | Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXYS Corporation | STD12NF06L-1 vs IXFH28N50Q |
IXFH26N50S | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247SMD, 3 PIN | IXYS Corporation | STD12NF06L-1 vs IXFH26N50S |
IXTK33N50 | Power Field-Effect Transistor, 33A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | Littelfuse Inc | STD12NF06L-1 vs IXTK33N50 |