Transistors
STB5NB60T4
STMicroelectronics
Description: 5A, 600V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3

Overview of STB5NB60T4 by STMicroelectronics

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for STB5NB60T4 by STMicroelectronics
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Part Data Attributes for STB5NB60T4 by STMicroelectronics

STB5NB60T4
STMicroelectronics
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
STMICROELECTRONICS
Part Package Code
D2PAK
Package Description
TO-263, D2PAK-3
Pin Count
4
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
300 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
5 A
Drain-source On Resistance-Max
2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
100 W
Pulsed Drain Current-Max (IDM)
20 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. STB5NB60T4
    STMicroelectronics
    5A, 600V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
    VS

Alternate Parts for STB5NB60T4

This table gives cross-reference parts and alternative options found for STB5NB60T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB5NB60T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFBC40STRL Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier STB5NB60T4 vs IRFBC40STRL
STB3NK60ZT4 N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in D2PAK package STMicroelectronics STB5NB60T4 vs STB3NK60ZT4
NTB10N60T4 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 onsemi STB5NB60T4 vs NTB10N60T4
IRFBC20STRL Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier STB5NB60T4 vs IRFBC20STRL
FQB10N60C Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Fairchild Semiconductor Corporation STB5NB60T4 vs FQB10N60C
FQB5N60C Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Fairchild Semiconductor Corporation STB5NB60T4 vs FQB5N60C
IRFBC40SPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier STB5NB60T4 vs IRFBC40SPBF
IRFBC40S Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier STB5NB60T4 vs IRFBC40S
2SK3930-01S Power Field-Effect Transistor, 11A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Fuji Electric Co Ltd STB5NB60T4 vs 2SK3930-01S
FQB5N60 Power Field-Effect Transistor, 5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation STB5NB60T4 vs FQB5N60

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