Part Details for STB12NM50FDT4 by STMicroelectronics
Overview of STB12NM50FDT4 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for STB12NM50FDT4
STB12NM50FDT4 CAD Models
STB12NM50FDT4 Part Data Attributes
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STB12NM50FDT4
STMicroelectronics
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Datasheet
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STB12NM50FDT4
STMicroelectronics
12A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 160 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB12NM50FDT4
This table gives cross-reference parts and alternative options found for STB12NM50FDT4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB12NM50FDT4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFS620 | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | STB12NM50FDT4 vs IRFS620 |
| SPP47N10 | Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STB12NM50FDT4 vs SPP47N10 |
| IXFH14N80 | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | STB12NM50FDT4 vs IXFH14N80 |
| STP13NK50Z | 11A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | STB12NM50FDT4 vs STP13NK50Z |
| RFD14N06 | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | STB12NM50FDT4 vs RFD14N06 |
| SPP80N06S2L-06 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STB12NM50FDT4 vs SPP80N06S2L-06 |
| STW20NM60FD | N-CHANNEL 600V 0.26 Ohm 20A TO-247 FDmesh™ POWER MOSFET | STMicroelectronics | STB12NM50FDT4 vs STW20NM60FD |
| IXFH28N50Q | Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXYS Corporation | STB12NM50FDT4 vs IXFH28N50Q |
| IXFH26N50S | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247SMD, 3 PIN | IXYS Corporation | STB12NM50FDT4 vs IXFH26N50S |
| IXTK33N50 | Power Field-Effect Transistor, 33A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | Littelfuse Inc | STB12NM50FDT4 vs IXTK33N50 |