Part Details for STB12NM50-1 by STMicroelectronics
Overview of STB12NM50-1 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for STB12NM50-1
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 500V, 0.35OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-262AA | 10 |
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$2.0250 / $4.0500 | Buy Now |
Part Details for STB12NM50-1
STB12NM50-1 CAD Models
STB12NM50-1 Part Data Attributes:
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STB12NM50-1
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB12NM50-1
STMicroelectronics
12A, 500V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-262AA | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 400 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.35 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 110 W | |
Pulsed Drain Current-Max (IDM) | 48 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for STB12NM50-1
This table gives cross-reference parts and alternative options found for STB12NM50-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB12NM50-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SPB12N50C3AT | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STB12NM50-1 vs SPB12N50C3AT |
STB12NM50N | 11A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | STB12NM50-1 vs STB12NM50N |
SPI12N50C3HKSA1 | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | STB12NM50-1 vs SPI12N50C3HKSA1 |
SIHP12N50E-GE3 | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | STB12NM50-1 vs SIHP12N50E-GE3 |
SIHB12N50E-GE3 | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Vishay Intertechnologies | STB12NM50-1 vs SIHB12N50E-GE3 |
SPW12N50C3FKSA1 | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | STB12NM50-1 vs SPW12N50C3FKSA1 |
STB12NM50NT4 | 11A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK, 3 PIN | STMicroelectronics | STB12NM50-1 vs STB12NM50NT4 |