Part Details for SIHB12N50E-GE3 by Vishay Intertechnologies
Overview of SIHB12N50E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHB12N50E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
43Y2393
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Newark | Mosfet Transistor, N Channel, 10.5 A, 500 V, 0.33 Ohm, 10 V, 4 V Rohs Compliant: Yes |Vishay SIHB12N50E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.7700 / $2.4300 | Buy Now |
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DISTI #
38Y8542
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Newark | Mosfet, N Channel, 500V, 10.5A, To-263-3, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:10.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay SIHB12N50E-GE3 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.4000 | Buy Now |
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DISTI #
SIHB12N50E-GE3
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Avnet Americas | Trans MOSFET N-CH 500V 10.5A 3-Pin D2PAK - Tape and Reel (Alt: SIHB12N50E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$1.0395 / $1.3205 | Buy Now |
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DISTI #
78-SIHB12N50E-GE3
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Mouser Electronics | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 56 |
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$0.9950 / $2.3400 | Buy Now |
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Future Electronics | Single N-Channel 500 V 0.38 Ohm 50 nC 114 W Silicon Mosfet - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 22 Weeks Container: Tube | 0Tube |
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$0.9500 / $1.0300 | Buy Now |
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DISTI #
SIHB12N50E-GE3
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TTI | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube | Americas - 0 |
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$0.9700 / $1.0300 | Buy Now |
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DISTI #
SIHB12N50E-GE3
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EBV Elektronik | Trans MOSFET N-CH 500V 10.5A 3-Pin D2PAK (Alt: SIHB12N50E-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHB12N50E-GE3
SIHB12N50E-GE3 CAD Models
SIHB12N50E-GE3 Part Data Attributes:
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SIHB12N50E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHB12N50E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 103 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 10.5 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 21 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHB12N50E-GE3
This table gives cross-reference parts and alternative options found for SIHB12N50E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHB12N50E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STB12NM50-1 | 12A, 500V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | SIHB12N50E-GE3 vs STB12NM50-1 |
| STB12NM50N | 11A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | SIHB12N50E-GE3 vs STB12NM50N |
| SHD208505 | Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Sensitron Semiconductors | SIHB12N50E-GE3 vs SHD208505 |
| SPB12N50C3AT | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SIHB12N50E-GE3 vs SPB12N50C3AT |
| STD12NM50NT4 | 11A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK, 3 PIN | STMicroelectronics | SIHB12N50E-GE3 vs STD12NM50NT4 |
| SIHP12N50E-GE3 | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHB12N50E-GE3 vs SIHP12N50E-GE3 |
| SPW12N50C3FKSA1 | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SIHB12N50E-GE3 vs SPW12N50C3FKSA1 |
| SPI12N50C3HKSA1 | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SIHB12N50E-GE3 vs SPI12N50C3HKSA1 |