Part Details for SSR1N60BTM-WS by onsemi
Overview of SSR1N60BTM-WS by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SSR1N60BTM-WS
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SSR1N60BTM-WS
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Avnet Americas | N-CH/600V/0.9A/12OHM/SUBSTITUTE OF SSR1N60ATM - Tape and Reel (Alt: SSR1N60BTM-WS) RoHS: Compliant Min Qty: 1886 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 6355 Partner Stock |
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RFQ | |
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Rochester Electronics | SSR1N60 - Power Field-Effect Transistor, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 6355 |
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$0.1644 / $0.1934 | Buy Now |
Part Details for SSR1N60BTM-WS
SSR1N60BTM-WS CAD Models
SSR1N60BTM-WS Part Data Attributes
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SSR1N60BTM-WS
onsemi
Buy Now
Datasheet
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Compare Parts:
SSR1N60BTM-WS
onsemi
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 0.9 A | |
| Drain-source On Resistance-Max | 12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 4.7 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 28 W | |
| Pulsed Drain Current-Max (IDM) | 3 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 140 ns | |
| Turn-on Time-Max (ton) | 140 ns |