-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for SQ2308CES-T1_GE3 by Vishay Intertechnologies
Overview of SQ2308CES-T1_GE3 by Vishay Intertechnologies
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Consumer Electronics
Audio and Video Systems
Aerospace and Defense
Entertainment and Gaming
Communication and Networking
Price & Stock for SQ2308CES-T1_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
98AC2638
|
Newark | N-Channel 60-V (D-S) 175C Mosfet Rohs Compliant: No |Vishay SQ2308CES-T1_GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 33000 |
|
$0.2070 | Buy Now |
|
DISTI #
96Y9635
|
Newark | Mosfet, Aec-Q101, N-Ch, 60V, 2.3A, Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SQ2308CES-T1_GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 42867 |
|
$0.4340 / $0.6920 | Buy Now |
|
DISTI #
76Y1606
|
Newark | N-Channel 60-V (D-S) 175C Mosfet |Vishay SQ2308CES-T1_GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1920 / $0.2560 | Buy Now |
|
DISTI #
SQ2308CES-T1_GE3
|
Avnet Americas | Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SQ2308CES-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel | 33000 |
|
$0.1873 / $0.2062 | Buy Now |
|
DISTI #
SQ2308CES-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SQ2308CES-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
RFQ | |
|
DISTI #
96Y9635
|
Avnet Americas | Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 96Y9635) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 0 Days Container: Ammo Pack | 1205 Partner Stock |
|
$0.4250 / $0.6190 | Buy Now |
|
DISTI #
78-SQ2308CES-T1_GE3
|
Mouser Electronics | MOSFET 60V 2.3A 2watt AEC-Q101 Qualified RoHS: Compliant | 18579 |
|
$0.1860 / $0.6300 | Buy Now |
|
|
Future Electronics | SQ2308CES Series 60 V 150 mOhm Surface Mount N-Channel Mosfet - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.1830 / $0.1950 | Buy Now |
|
|
Future Electronics | SQ2308CES Series 60 V 150 mOhm Surface Mount N-Channel Mosfet - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.1830 / $0.1950 | Buy Now |
|
|
Future Electronics | SQ2308CES Series 60 V 150 mOhm Surface Mount N-Channel Mosfet - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.1830 / $0.1950 | Buy Now |
Part Details for SQ2308CES-T1_GE3
SQ2308CES-T1_GE3 CAD Models
SQ2308CES-T1_GE3 Part Data Attributes:
|
|
SQ2308CES-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SQ2308CES-T1_GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 2.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | TO-236, SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 2.5 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 2.3 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 18 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 9 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 35 ns | |
| Turn-on Time-Max (ton) | 19 ns |