Part Details for SPU02N60S5BKMA1 by Infineon Technologies AG
Overview of SPU02N60S5BKMA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SPU02N60S5BKMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | SPU02N60 - 600V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 6980 |
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$0.5941 / $0.6990 | Buy Now |
Part Details for SPU02N60S5BKMA1
SPU02N60S5BKMA1 CAD Models
SPU02N60S5BKMA1 Part Data Attributes:
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SPU02N60S5BKMA1
Infineon Technologies AG
Buy Now
Datasheet
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SPU02N60S5BKMA1
Infineon Technologies AG
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, IPAK-3
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-251AA | |
| Package Description | GREEN, PLASTIC, TO-251, IPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 1.8 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 3.2 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SPU02N60S5BKMA1
This table gives cross-reference parts and alternative options found for SPU02N60S5BKMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPU02N60S5BKMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPU02N60C3BKMA1 | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, IPAK-3 | Infineon Technologies AG | SPU02N60S5BKMA1 vs SPU02N60C3BKMA1 |
| SPB02N60C3E3045A | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | SPU02N60S5BKMA1 vs SPB02N60C3E3045A |
| SPB02N60S5ATMA1 | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPU02N60S5BKMA1 vs SPB02N60S5ATMA1 |
| SPS02N60C3XK | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPU02N60S5BKMA1 vs SPS02N60C3XK |
| Q67040-S4393 | Power Field-Effect Transistor | Infineon Technologies AG | SPU02N60S5BKMA1 vs Q67040-S4393 |
| Q67040-S4392 | Power Field-Effect Transistor | Infineon Technologies AG | SPU02N60S5BKMA1 vs Q67040-S4392 |
| SPP02N60C3XKSA1 | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPU02N60S5BKMA1 vs SPP02N60C3XKSA1 |