Part Details for SPP20N60S5HKSA1 by Infineon Technologies AG
Overview of SPP20N60S5HKSA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SPP20N60S5HKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SPP20N60S5HKSA1-ND
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DigiKey | HIGH POWER_LEGACY Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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DISTI #
SPP20N60S5HKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: SPP20N60S5HKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Container: Tube | 0 |
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RFQ |
Part Details for SPP20N60S5HKSA1
SPP20N60S5HKSA1 CAD Models
SPP20N60S5HKSA1 Part Data Attributes:
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SPP20N60S5HKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPP20N60S5HKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPP20N60S5HKSA1
This table gives cross-reference parts and alternative options found for SPP20N60S5HKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP20N60S5HKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXKH20N60C5 | Power Field-Effect Transistor, | Littelfuse Inc | SPP20N60S5HKSA1 vs IXKH20N60C5 |
| SIHH21N65EF-T1-GE3 | Power Field-Effect Transistor, 19.8A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK-4 | Vishay Intertechnologies | SPP20N60S5HKSA1 vs SIHH21N65EF-T1-GE3 |
| SPP20N60S5XKSA1 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPP20N60S5HKSA1 vs SPP20N60S5XKSA1 |
| RJK60S5DPK-M0-T0 | 20A, 600V, 0.178ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PSG, 3 PIN | Renesas Electronics Corporation | SPP20N60S5HKSA1 vs RJK60S5DPK-M0-T0 |
| STB28N65M2 | N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package | STMicroelectronics | SPP20N60S5HKSA1 vs STB28N65M2 |
| R6020ENJTL | Power Field-Effect Transistor, 20A I(D), 600V, 0.196ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, SC-83, 3/2 PIN | ROHM Semiconductor | SPP20N60S5HKSA1 vs R6020ENJTL |
| TK20E60U | TRANSISTOR POWER, FET, FET General Purpose Power | Toshiba America Electronic Components | SPP20N60S5HKSA1 vs TK20E60U |
| R6020KNJTL | Power Field-Effect Transistor, | ROHM Semiconductor | SPP20N60S5HKSA1 vs R6020KNJTL |
| APT20N60KC3 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AC, 3 PIN | Advanced Power Technology | SPP20N60S5HKSA1 vs APT20N60KC3 |
| IPB60R190C6ATMA1 | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPP20N60S5HKSA1 vs IPB60R190C6ATMA1 |