SPP20N60S5HKSA1
vs
SIHH21N65EF-T1-GE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
VISHAY INTERTECHNOLOGY INC
Package Description
FLANGE MOUNT, R-PSFM-T3
SMALL OUTLINE, S-PSSO-N4
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Vishay
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
690 mJ
353 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
650 V
Drain Current-Max (ID)
20 A
19.8 A
Drain-source On Resistance-Max
0.19 Ω
0.18 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
S-PSSO-N4
Number of Elements
1
1
Number of Terminals
3
4
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
SQUARE
Package Style
FLANGE MOUNT
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
40 A
53 A
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
NO LEAD
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Factory Lead Time
19 Weeks
Compare SPP20N60S5HKSA1 with alternatives
Compare SIHH21N65EF-T1-GE3 with alternatives