Datasheets
SPD08N05L by:

Power Field-Effect Transistor, 8A I(D), 55V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN

Part Details for SPD08N05L by Siemens

Overview of SPD08N05L by Siemens

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Part Details for SPD08N05L

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SPD08N05L Part Data Attributes:

SPD08N05L Siemens
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SPD08N05L Siemens Power Field-Effect Transistor, 8A I(D), 55V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SPD08N05L

This table gives cross-reference parts and alternative options found for SPD08N05L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD08N05L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPD08N05L 8.4A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, TO-252, 3 PIN Rochester Electronics LLC SPD08N05L vs SPD08N05L
Part Number Description Manufacturer Compare
HUF75617D3S 16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC SPD08N05L vs HUF75617D3S
FQI6N50TU 5.5A, 500V, 1.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 Rochester Electronics LLC SPD08N05L vs FQI6N50TU
FQPF30N06 21A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN Rochester Electronics LLC SPD08N05L vs FQPF30N06
SPU08P06P Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Siemens SPD08N05L vs SPU08P06P
IRF840R 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC SPD08N05L vs IRF840R
2SK3062-ZJ Power Field-Effect Transistor, 70A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, TO-263, 3 PIN NEC Electronics Group SPD08N05L vs 2SK3062-ZJ
2SJ660 Power Field-Effect Transistor, 26A I(D), 60V, 0.094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMP, 3 PIN SANYO Electric Co Ltd SPD08N05L vs 2SJ660
FQP13N06 13A, 60V, 0.135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC SPD08N05L vs FQP13N06
FDH27N50 27A, 500V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN Rochester Electronics LLC SPD08N05L vs FDH27N50
FQPF13N50C 13A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN Rochester Electronics LLC SPD08N05L vs FQPF13N50C

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