Part Details for SPD08N05L by Siemens
Overview of SPD08N05L by Siemens
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SPD08N05L
SPD08N05L CAD Models
SPD08N05L Part Data Attributes
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SPD08N05L
Siemens
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Datasheet
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SPD08N05L
Siemens
Power Field-Effect Transistor, 8A I(D), 55V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Part Package Code | TO-252 | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.18 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SPD08N05L
This table gives cross-reference parts and alternative options found for SPD08N05L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD08N05L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NTD4857NT4G | 12A, 25V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AA-01, DPAK-3 | Rochester Electronics LLC | SPD08N05L vs NTD4857NT4G |
2SJ660 | Power Field-Effect Transistor, 26A I(D), 60V, 0.094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMP, 3 PIN | SANYO Electric Co Ltd | SPD08N05L vs 2SJ660 |
IRF450 | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | International Rectifier | SPD08N05L vs IRF450 |
IRF740R | 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | SPD08N05L vs IRF740R |
SSF7N80A | Power Field-Effect Transistor, 5A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Samsung Semiconductor | SPD08N05L vs SSF7N80A |
IRF1405ZS | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | SPD08N05L vs IRF1405ZS |
FQP9N50 | 9A, 500V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | SPD08N05L vs FQP9N50 |
FDB8878 | 48A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT PACKAGE-3 | Rochester Electronics LLC | SPD08N05L vs FDB8878 |
FQA7N80 | 7.2A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | Rochester Electronics LLC | SPD08N05L vs FQA7N80 |
SPP08P06P | 8.8A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Rochester Electronics LLC | SPD08N05L vs SPP08P06P |