There are no models available for this part yet.
Overview of SPA20N65C3 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 4 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for SPA20N65C3 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
726-SPA20N65C3
|
Mouser Electronics | MOSFETs N-Ch 650V 20.7A TO220FP-3 CoolMOS C3 RoHS: Compliant | 0 |
|
Order Now | ||
Bristol Electronics | 250 |
|
RFQ | ||||
Quest Components | 200 |
|
$4.1736 / $6.7680 | Buy Now | |||
Ameya Holding Limited | MOSFET N-CH 650V 20.7A TO-220 | 985 |
|
RFQ |
CAD Models for SPA20N65C3 by Infineon Technologies AG
Part Data Attributes for SPA20N65C3 by Infineon Technologies AG
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Not Recommended
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Part Package Code
|
TO-220AB
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count
|
3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Infineon
|
Additional Feature
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas)
|
690 mJ
|
Case Connection
|
ISOLATED
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
650 V
|
Drain Current-Max (ID)
|
20.7 A
|
Drain-source On Resistance-Max
|
0.19 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-220AB
|
JESD-30 Code
|
R-PSFM-T3
|
JESD-609 Code
|
e3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
34.5 W
|
Pulsed Drain Current-Max (IDM)
|
62.1 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
Tin (Sn)
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for SPA20N65C3
This table gives cross-reference parts and alternative options found for SPA20N65C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA20N65C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SPP15N60CFDHKSA1 | Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPA20N65C3 vs SPP15N60CFDHKSA1 |
SPA20N65C3XKSA1 | Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3 | Infineon Technologies AG | SPA20N65C3 vs SPA20N65C3XKSA1 |
SPP15N60CFD | Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPA20N65C3 vs SPP15N60CFD |
STF25NM60ND | N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package | STMicroelectronics | SPA20N65C3 vs STF25NM60ND |
TK20A60W5 | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | SPA20N65C3 vs TK20A60W5 |
TSM60NB190CZC0G | Power Field-Effect Transistor, 18A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Taiwan Semiconductor | SPA20N65C3 vs TSM60NB190CZC0G |
STB15NM60ND | N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in D2PAK package | STMicroelectronics | SPA20N65C3 vs STB15NM60ND |
STB15NM60N | 14A, 600V, 0.299ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 | STMicroelectronics | SPA20N65C3 vs STB15NM60N |
SPW20N60S5FKSA1 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPA20N65C3 vs SPW20N60S5FKSA1 |
SIHP14N60E-GE3 | Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SPA20N65C3 vs SIHP14N60E-GE3 |
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