Transistors
SPA20N65C3
Infineon Technologies AG
Description: Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3

Overview of SPA20N65C3 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Price & Stock for SPA20N65C3 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 726-SPA20N65C3
Mouser Electronics MOSFETs N-Ch 650V 20.7A TO220FP-3 CoolMOS C3 RoHS: Compliant 0
Order Now
Bristol Electronics   250
RFQ
Quest Components   200
  • 1 $6.7680
  • 16 $4.5120
  • 56 $4.1736
$4.1736 / $6.7680 Buy Now
Ameya Holding Limited MOSFET N-CH 650V 20.7A TO-220 985
RFQ

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Part Data Attributes for SPA20N65C3 by Infineon Technologies AG

SPA20N65C3
Infineon Technologies AG
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
690 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
650 V
Drain Current-Max (ID)
20.7 A
Drain-source On Resistance-Max
0.19 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
34.5 W
Pulsed Drain Current-Max (IDM)
62.1 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SPA20N65C3
    Infineon Technologies AG
    Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3
    VS

Alternate Parts for SPA20N65C3

This table gives cross-reference parts and alternative options found for SPA20N65C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA20N65C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SPP15N60CFDHKSA1 Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPA20N65C3 vs SPP15N60CFDHKSA1
SPA20N65C3XKSA1 Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3 Infineon Technologies AG SPA20N65C3 vs SPA20N65C3XKSA1
SPP15N60CFD Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPA20N65C3 vs SPP15N60CFD
STF25NM60ND N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package STMicroelectronics SPA20N65C3 vs STF25NM60ND
TK20A60W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V Toshiba America Electronic Components SPA20N65C3 vs TK20A60W5
TSM60NB190CZC0G Power Field-Effect Transistor, 18A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Taiwan Semiconductor SPA20N65C3 vs TSM60NB190CZC0G
STB15NM60ND N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in D2PAK package STMicroelectronics SPA20N65C3 vs STB15NM60ND
STB15NM60N 14A, 600V, 0.299ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 STMicroelectronics SPA20N65C3 vs STB15NM60N
SPW20N60S5FKSA1 Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG SPA20N65C3 vs SPW20N60S5FKSA1
SIHP14N60E-GE3 Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SPA20N65C3 vs SIHP14N60E-GE3

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