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Part Details for TK20A60W5 by Toshiba America Electronic Components
Overview of TK20A60W5 by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for TK20A60W5
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TK20A60W5,S5VX
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Avnet Americas | Trans MOSFET N-CH 600V 20A 3-Pin TO-220SIS - Rail/Tube (Alt: TK20A60W5,S5VX) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 32 Weeks, 0 Days Container: Tube | 0 |
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$1.5040 / $1.7977 | Buy Now |
Part Details for TK20A60W5
TK20A60W5 CAD Models
TK20A60W5 Part Data Attributes
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TK20A60W5
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK20A60W5
Toshiba America Electronic Components
Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 32 Weeks | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.175 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TK20A60W5
This table gives cross-reference parts and alternative options found for TK20A60W5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK20A60W5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPP15N60CFDHKSA1 | Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | TK20A60W5 vs SPP15N60CFDHKSA1 |
| SPA20N65C3XKSA1 | Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3 | Infineon Technologies AG | TK20A60W5 vs SPA20N65C3XKSA1 |
| SPP15N60CFD | Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | TK20A60W5 vs SPP15N60CFD |
| STF25NM60ND | N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package | STMicroelectronics | TK20A60W5 vs STF25NM60ND |
| TSM60NB190CZC0G | Power Field-Effect Transistor, 18A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Taiwan Semiconductor | TK20A60W5 vs TSM60NB190CZC0G |
| STB15NM60ND | N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in D2PAK package | STMicroelectronics | TK20A60W5 vs STB15NM60ND |
| STB15NM60N | 14A, 600V, 0.299ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 | STMicroelectronics | TK20A60W5 vs STB15NM60N |
| SPW20N60S5FKSA1 | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | TK20A60W5 vs SPW20N60S5FKSA1 |
| SIHP14N60E-GE3 | Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | TK20A60W5 vs SIHP14N60E-GE3 |
| SIHA21N60EF-GE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Intertechnologies | TK20A60W5 vs SIHA21N60EF-GE3 |