Datasheets
SPA20N60C2 by: Infineon Technologies AG

Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, FULL PACK-3

Part Details for SPA20N60C2 by Infineon Technologies AG

Overview of SPA20N60C2 by Infineon Technologies AG

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Applications Consumer Electronics Audio and Video Systems

Part Details for SPA20N60C2

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SPA20N60C2 Part Data Attributes:

SPA20N60C2 Infineon Technologies AG
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SPA20N60C2 Infineon Technologies AG Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, FULL PACK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code SFM
Package Description PLASTIC, TO-220, FULL PACK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 690 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 34.5 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for SPA20N60C2

This table gives cross-reference parts and alternative options found for SPA20N60C2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA20N60C2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
934057024118 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 NXP Semiconductors SPA20N60C2 vs 934057024118
STD3NA50T4 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics SPA20N60C2 vs STD3NA50T4
IXFH68N20 Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, IXYS Corporation SPA20N60C2 vs IXFH68N20
IRF620B Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation SPA20N60C2 vs IRF620B
SPA16N50C3 Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN Infineon Technologies AG SPA20N60C2 vs SPA16N50C3
STD7NK30Z 5A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 STMicroelectronics SPA20N60C2 vs STD7NK30Z
IXFH32N50Q Power Field-Effect Transistor, 32A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN IXYS Corporation SPA20N60C2 vs IXFH32N50Q
IPD06N03LBG Power Field-Effect Transistor, 50A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN Infineon Technologies AG SPA20N60C2 vs IPD06N03LBG
NP90N055VUG-E1-AY Power MOSFETs for Automotive, MP-3ZP, /Embossed Tape Renesas Electronics Corporation SPA20N60C2 vs NP90N055VUG-E1-AY
BUK9614-30 69A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET NXP Semiconductors SPA20N60C2 vs BUK9614-30

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