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Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-SPA08N80C3
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Mouser Electronics | MOSFET N-Ch 800V 8A TO220FP-3 CoolMOS C3 RoHS: Compliant | 7 |
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$1.3300 / $2.7500 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 800V, 0.65OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 85 |
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$1.4963 / $2.4938 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 800V, 0.65OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 72 |
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$1.9950 / $3.9900 | Buy Now |
DISTI #
SPA08N80C3
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TME | Transistor: N-MOSFET, unipolar, 800V, 8A, 40W, PG-TO220-3-FP Min Qty: 1 | 97 |
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$2.3600 / $3.2800 | Buy Now |
DISTI #
TMOSP6148
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Rutronik | N-CH 800V 8A 650mOhm TO220FP RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube |
Stock DE - 500 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$1.1300 / $1.4500 | Buy Now |
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Chip1Cloud | MOSFET N-CH 800V 8A TO220FP | 23945 |
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RFQ | |
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Wuhan P&S | 800V,8A,N channel Power MOSFET Min Qty: 1 | 50 |
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$1.1200 / $1.5700 | Buy Now |
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SPA08N80C3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPA08N80C3
Infineon Technologies AG
Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
Avalanche Energy Rating (Eas) | 340 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.65 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 24 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SPA08N80C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA08N80C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
STF3NK80Z | N-channel 800 V, 3.8 Ohm typ., 2.5 A SuperMESH Power MOSFET in TO-220FP package | STMicroelectronics | SPA08N80C3 vs STF3NK80Z |
STP5NK80ZFP-H | 4.3A, 800V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220FP, 3 PIN | STMicroelectronics | SPA08N80C3 vs STP5NK80ZFP-H |
STP4NK80ZFP | N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in a TO-220FP package | STMicroelectronics | SPA08N80C3 vs STP4NK80ZFP |
STP10NK60ZFP | N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in TO-220FP package | STMicroelectronics | SPA08N80C3 vs STP10NK60ZFP |
STP3NB90FP | 3.5A, 900V, 4.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN | STMicroelectronics | SPA08N80C3 vs STP3NB90FP |
STP11NM60AFP | 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN | STMicroelectronics | SPA08N80C3 vs STP11NM60AFP |
SPA11N80C3 | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN | Infineon Technologies AG | SPA08N80C3 vs SPA11N80C3 |
STP14NK60ZFP | N-channel 600 V, 0.45 Ohm typ., 13.5 A SuperMESH Power MOSFET in TO-220FP package | STMicroelectronics | SPA08N80C3 vs STP14NK60ZFP |
STP5NC90ZFP | 4.6A, 900V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN | STMicroelectronics | SPA08N80C3 vs STP5NC90ZFP |
STP8NM60FP | 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN | STMicroelectronics | SPA08N80C3 vs STP8NM60FP |