Part Details for SP001058824 by Infineon Technologies AG
Overview of SP001058824 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SP001058824
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-SP001058824
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Mouser Electronics | MOSFET P-Ch -60V 1.9A SOT-223-3 RoHS: Compliant | 4835 |
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$0.2930 / $0.8800 | Buy Now |
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DISTI #
SP001058824
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EBV Elektronik | Trans MOSFET P-CH -60V -1.9A 4-Pin SOT-223 T/R (Alt: SP001058824) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 21 Weeks, 0 Days | EBV - 358000 |
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Buy Now |
Part Details for SP001058824
SP001058824 CAD Models
SP001058824 Part Data Attributes
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SP001058824
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SP001058824
Infineon Technologies AG
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 1.9 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 55 pF | |
| JESD-30 Code | R-PDSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SP001058824
This table gives cross-reference parts and alternative options found for SP001058824. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SP001058824, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHFL9014TR-GE3 | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN | Vishay Intertechnologies | SP001058824 vs SIHFL9014TR-GE3 |
| IRFL9014TR | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Vishay Siliconix | SP001058824 vs IRFL9014TR |
| SIHFL9014TR-GE3 | TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal | Vishay Siliconix | SP001058824 vs SIHFL9014TR-GE3 |
| IRFL9014TR | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | Vishay Intertechnologies | SP001058824 vs IRFL9014TR |
| BSP171PH6327XTSA1 | Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | SP001058824 vs BSP171PH6327XTSA1 |
| IRFL9014PBF | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 | Vishay Intertechnologies | SP001058824 vs IRFL9014PBF |
| IRFL9014 | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Vishay Siliconix | SP001058824 vs IRFL9014 |
| IRFL9014TRPBF | TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power | Vishay Siliconix | SP001058824 vs IRFL9014TRPBF |
| IRFL9014TRPBF | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN | Vishay Intertechnologies | SP001058824 vs IRFL9014TRPBF |