Part Details for SMBT3906E6327 by Infineon Technologies AG
Overview of SMBT3906E6327 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for SMBT3906E6327
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 39000 |
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RFQ | ||
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Bristol Electronics | 12000 |
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RFQ | ||
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Bristol Electronics | 8105 |
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Bristol Electronics | Min Qty: 27 | 5690 |
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$0.0375 / $0.1875 | Buy Now |
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Bristol Electronics | 4200 |
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RFQ | ||
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DISTI #
SMBT3906E6327
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TME | Transistor: PNP, bipolar, 40V, 0.2A, 0.33W, SOT23 Min Qty: 10 | 1920 |
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$0.0440 / $0.0815 | Buy Now |
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ComSIT USA | PNP SILICON SWITCHING TRANSISTOR Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon RoHS: Compliant |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 3398 |
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$0.2500 / $0.3800 | Buy Now |
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Sense Electronic Company Limited | SOT23 | 3000 |
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RFQ |
Part Details for SMBT3906E6327
SMBT3906E6327 CAD Models
SMBT3906E6327 Part Data Attributes
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SMBT3906E6327
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SMBT3906E6327
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Collector Current-Max (IC) | 0.2 A | |
| Collector-Emitter Voltage-Max | 40 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 80 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 0.33 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| Turn-off Time-Max (toff) | 300 ns | |
| Turn-on Time-Max (ton) | 70 ns |
Alternate Parts for SMBT3906E6327
This table gives cross-reference parts and alternative options found for SMBT3906E6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SMBT3906E6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MMBT3906LP-7B | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, LEADLESS, ULTRA SMALL, PLASTIC, DFN1006-3, 3 PIN | Diodes Incorporated | SMBT3906E6327 vs MMBT3906LP-7B |
| CMPT3906GBK | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 | Central Semiconductor Corp | SMBT3906E6327 vs CMPT3906GBK |
| FMMT3904 | Small Signal Bipolar Transistor, | Plessey Semiconductors Ltd | SMBT3906E6327 vs FMMT3904 |
| MMBT3906LT1G | 200 mA, 40 V PNP Bipolar Junction Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL | onsemi | SMBT3906E6327 vs MMBT3906LT1G |
| UMT3906 | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, | ROHM Semiconductor | SMBT3906E6327 vs UMT3906 |
| MMBT3906LT3G | 200 mA, 40 V PNP Bipolar Junction Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL | onsemi | SMBT3906E6327 vs MMBT3906LT3G |
| MMBT3906LT1-TP | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 | Micro Commercial Components | SMBT3906E6327 vs MMBT3906LT1-TP |
| SST3906T216 | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, | ROHM Semiconductor | SMBT3906E6327 vs SST3906T216 |
| SMBT3906 | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | SMBT3906E6327 vs SMBT3906 |
| BSR18ATRL | 200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR | NXP Semiconductors | SMBT3906E6327 vs BSR18ATRL |