Datasheets
SKT351F08DT by: SEMIKRON

Silicon Controlled Rectifier, 900A I(T)RMS, 350000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB

Part Details for SKT351F08DT by SEMIKRON

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SKT351F08DT Part Data Attributes:

SKT351F08DT SEMIKRON
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SKT351F08DT SEMIKRON Silicon Controlled Rectifier, 900A I(T)RMS, 350000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB
Part Life Cycle Code Obsolete
Ihs Manufacturer SEMIKRON INTERNATIONAL
Package Description DISK BUTTON, O-CEDB-N2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.30.00.80
Additional Feature FAST
Circuit Commutated Turn-off Time-Nom 20 µs
Configuration SINGLE
Critical Rate of Rise of Off-State Voltage-Min 500 V/us
DC Gate Trigger Current-Max 250 mA
DC Gate Trigger Voltage-Max 4 V
Holding Current-Max 400 mA
JEDEC-95 Code TO-200AB
JESD-30 Code O-CEDB-N2
Leakage Current-Max 80 mA
Non-Repetitive Pk On-state Cur 6500 A
Number of Elements 1
Number of Terminals 2
On-state Current-Max 350000 A
Operating Temperature-Max 125 °C
Operating Temperature-Min -40 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style DISK BUTTON
Qualification Status Not Qualified
RMS On-state Current-Max 900 A
Repetitive Peak Off-state Leakage Current-Max 80000 µA
Repetitive Peak Off-state Voltage 800 V
Repetitive Peak Reverse Voltage 800 V
Surface Mount YES
Terminal Form NO LEAD
Terminal Position END
Trigger Device Type SCR

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